Charge-carrier mobilities in Cd[sub 0.8]Zn[sub 0.2]Te single crystals used as nuclear radiation

Burshtein, Z.; Jayatirtha, H.N.
July 1993
Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p102
Academic Journal
Measures the charge-carrier mobilities in Cd[sub 0.8]Zn[0.2]Te single crystals. Indication of dispersive trap-controlled carrier motion in hole photocurrents; Observation of photocurrent decay in carrier trapping times; Relevance of electron trapping times values to a detector performance on irradiation.


Related Articles

  • Spectral function and character of the motion of a conduction electron in an orientationally disordered molecular cryocrystal. Loktev, V. M.; Sharapov, S. G.; Beck, H. // Low Temperature Physics;Mar2002, Vol. 28 Issue 3, p220 

    The spectral function of an excess particle (electron or hole) moving in a molecular cryocrystal having no long-range orientational order is calculated. It is shown that the spectral function, on the assumption of exponential decay (in time and space) of the correlations between the angles...

  • An Analysis of the Temperature Dependence of the Electron Mobility in the CdGeAs[sub 2] Single Crystals. Borisenko, S. I.; Rud�, V. Yu.; Rud�, Yu. V.; Tyuterev, V. G. // Semiconductors;Jun2001, Vol. 35 Issue 6, p690 

    The experimental temperature dependence of the Hall mobility of the degenerate electron gas in the CdGeAs[sub 2] single crystals was analyzed. For this purpose, the drift mobility was calculated by numerically solving the Boltzmann equation in the effective mass and isotropic continuum...

  • Measurement of orientational order and mobility of a nematic liquid crystal in random nanometer... Cramer, Ch.; Cramer, Th. // Journal of Chemical Physics;3/1/1997, Vol. 106 Issue 9, p3730 

    Discusses liquid crystalline order and molecular mobility. Dynamics of mesogenic molecules in the free volume of nanoporous sol-gel glass; Boundary layer of molecules with reduced mobility that covers the pore walls; Extraction of temperature dependence of the nematic order parameter; Spectra...

  • Almost temperature independent charge carrier mobilities in liquid crystals. Palenberg, M. A.; Silbey, R. J.; Malagoli, M.; Brédas, J.-L. // Journal of Chemical Physics;1/15/2000, Vol. 112 Issue 3 

    We present a theoretical description of the almost temperature independent mobilities of photoinjected electrons or holes in discotic liquid crystals. Using data from band structure calculations on triphenylene-based systems, we calculate the electron and hole mobility using the framework of the...

  • High mobility AlInAs/InP high electron mobility transistor structures grown by organometallic.... Aina, L.; Mattingly, M.; Burgess, M.; Potter, R.; O'Connor, J.M. // Applied Physics Letters;9/16/1991, Vol. 59 Issue 12, p1485 

    Examines the growth of aluminum indium arsenide/indium phosphide high electron mobility transistor structures with high mobilities and sheet electron concentration. Measurements of electron mobilities; Calculation of sheet electron concentrations; Exhibition of Shubnikov de Haas oscillations.

  • Annealing effect on the carrier concentration in heavily Si-doped n[sup +]-InGaAs. Watanabe, Noriyuki; Nittono, Takumi // Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1945 

    Examines the annealing effect on the carrier concentration in silicon-doped in indium gallium arsenide epilayer grown on gallium arsenide substrate. Decrease in the carrier concentration caused by silicon atom movement; Reduction of dislocation density during the annealing process; Factors...

  • Fluorine-enhanced oxidation of polycrystalline silicon and application to thin-film transistor.... Kouvatsos, Dimitrios N.; Hatalis, Miltiadis K. // Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p937 

    Investigates the kinetics of the fluorinated oxidation of polycrystalline silicon and application to thin-film transistor fabrication. Growth of the silicon dioxide; Application of fluorinated gate oxides in the fabrication of thin-film transistors; Improvement of effective electron mobility.

  • Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide. Schadt, M.; Pensl, G. // Applied Physics Letters;12/12/1994, Vol. 65 Issue 24, p3120 

    Presents measurements of the electron Hall mobility anisotropy and temperature dependence in nitrogen-doped n-type bulk single crystals of 6H, 4H and 15R silicon carbide. Characteristics of the crystals; Temperature range used in the observation; Behavior of the mobility and magnetic field of...

  • Superlattices show quantum effects.  // Physics Today;Apr79, Vol. 32 Issue 4, p20 

    Reports on the quantum-size effects because of advances in controlling the growth of semiconductor heterostructures. Technique in growing crystals; Mobility of electrons in superlattices; Facts on quantum-well lasers.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics