TITLE

Femtosecond gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers

AUTHOR(S)
Sun, C.-K.; Choi, H.K.
PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p96
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the femtosecond gain dynamics in indium gallium (Ga) arsenide (As)/aluminum GaAs strained-layer single-quantum-well diode lasers. Variation in gain dynamics for different bias currents; Effect of bias currents on pump wavelength; Detection of carrier cooling for pump wavelengths above transparency point.
ACCESSION #
4167578

 

Related Articles

  • Demonstration of a grating-surface-emitting diode laser with low-threshold current density. Carlson, N. W.; Evans, G. A.; Bour, D. P.; Liew, S. K. // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p16 

    This letter reports the demonstration of grating-surface-emitting (GSE) lasers with threshold current densities as low as 440 A/cm2. When the distributed-Bragg-reflector sections were cleaved from these lasers, the resulting edge-emitting lasers had threshold current densities that were...

  • An evaluation method for laser diodes. Nakano, Y.; Iwane, G. // Journal of Applied Physics;7/1/1985, Vol. 58 Issue 1, p601 

    Evaluates laser diodes by measuring the variation in driving current of a laser diode operated at a constant light output power against ambient temperature. Information on the laser diode; Details on experiment; Aim of the buried heterostructure laser screening procedure.

  • Correlation between forward voltage at low current and catastrophic metal migration failure mechanisms in (AlGa)As laser diodes. Fritz, William J. // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p2819 

    Reports on the correlation between forward voltage at low current and catastrophic metal migration failure mechanisms in (AlGa)As laser diodes. Description of the laser diode structures studied; Analyses performed on the failed laser diodes; Correlations between electro-optical parameter...

  • Analytical solution for the lateral current distribution in multiple stripe laser diodes. Amann, Markus-Christian; Kappeler, Franz // Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1710 

    The lateral profile of the injection current along the active layer in multiple stripe laser diodes is analyzed for the practical case of homogeneous current density within each individual stripe contact. By means of conformal mapping an exact analytical solution is found for arbitrary contact...

  • Reduced threshold current in (111)B grown InGaAs/AlGaAs laser diodes: The positive role of piezoelectric effect. Deligeorgis, G.; Dialynas, G.; Hatzopoulos, Z.; Pelekanos, N. T. // Applied Physics Letters;3/19/2007, Vol. 90 Issue 12, p121126 

    The authors demonstrate that (111)B grown InGaAs/AlGaAs laser diodes outperform their (100) counterparts, in terms of lower threshold currents observed for all temperature and cavity lengths tested. A low temperature threshold current density as low as 15 A/cm2 has been observed in (111)B grown...

  • Design and Application of Pulse Laser Diode Drive. Jassim, Awatif Sabir // European Journal of Scientific Research;12/ 1/2010, Vol. 47 Issue 3, p395 

    In this work a circuit drive for pulsed laser diode has been designed with (904nm, 200ns, 10W per pulse) and the performance of this circuit was studied , The specification semiconductor laser (SC) has been studied , the result shows increasing in current causes an increasing in the power, but...

  • Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser. Biryukov, A. A.; Zvonkov, B. N.; Nekorkin, S. M.; Aleshkin, V. Ya.; Dubinov, A. A.; Kocharovskii, V. V.; Kocharovskii, Vl. V. // Semiconductors;Mar2008, Vol. 42 Issue 3, p354 

    Generation of the first excited transverse mode (TE1) in a new InGaAs/GaAs/InGaP diode heterolaser with a thin InGaP layer at the waveguide center was studied. This laser design decreases the competition of the first and fundamental modes and provides TE1 mode lasing at a threshold current...

  • An impact of a localization of an oxide aperture within a vertical-cavity surface-emitting diode laser (VCSEL) cavity on its lasing threshold. SARZALA, ROBERT P. // Optica Applicata;2005, Vol. 35 Issue 3, p635 

    In the present paper, an impact of localization of an oxide aperture within a vertical-cavity surface-emitting diode laser (VCSEL) on its threshold operation is analyzed. As expected, a shift of the aperture from the anti-node position of the standing optical wave within a VCSEL cavity to the...

  • Note: Demonstration of an external-cavity diode laser system immune to current and temperature fluctuations. Miao, Xinyu; Yin, Longfei; Zhuang, Wei; Luo, Bin; Dang, Anhong; Chen, Jingbiao; Guo, Hong // Review of Scientific Instruments;Aug2011, Vol. 82 Issue 8, p086106 

    We demonstrate an external-cavity laser system using an anti-reflection coated laser diode as gain medium with about 60 nm fluorescence spectrum, and a Rb Faraday anomalous dispersion optical filter (FADOF) as frequency-selecting element with a transmission bandwidth of 1.3 GHz. With 6.4%...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics