Stability of beryllium-doped compositionally graded and abrupt AlInAs/GaInAs heterojunction

Hafizi, Madjid; Metzger, Robert A.
July 1993
Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p93
Academic Journal
Analyzes the stability of base-emitter (BE) junction characteristics and dc current gain by aluminum indium (In) arsenide(As)/gallium InAs (GaInAs) heterojunction bipolar transistors. Approximation of doped GaInAs base thickness; Ranges of dc current gain; Diffusion of interstitial BE from the base into the emitter.


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