TITLE

Annealing of low-temperature GaAs studied using a variable energy positron beam

AUTHOR(S)
Keeble, D.J.; Umlor, M.T.
PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p87
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the annealing of low-temperature (LT) gallium arsenide (GaAs) using molecular beam epitaxy (MBE). Approximate pressure of LT-GaAs sample in Varian Gen II MBE system; Comparison between LT-GaAs layer and GaAs substrate on S parameter; Observation of defects in the LT-GaAS layer.
ACCESSION #
4167575

 

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