Ultrashallow depth profiling using ozone oxidation and HF etching of silicon

Lau, W.M.; Huang, L.J.
July 1993
Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p78
Academic Journal
Examines the use of ozone oxidation and hydrofluoric (HF) acid etching of silicon for semiconductor ultrashallow depth profiling. Measurement of silicon sample by Rutherford backscattering spectroscopy; Suppression of the surface states in the band gap of silicon by HF treatment; Applicability of the technique for determination of surface electrical properties in silicon.


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