TITLE

Self-stabilization of the multiplication factor in blocked impurity band photodetectors

AUTHOR(S)
Shadrin, V.D.; Coon, V.T.
PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p75
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the self-stabilization of electron multiplication factor (M) in blocked impurity band (BIB) infrared photodetectors. Dependence of M on bias voltage V[sub B]; Effect of V[sub B] on M and on the energy of electrons; Presence of an electric field and electron current in the neutral region of BIB.
ACCESSION #
4167571

 

Related Articles

  • Space-charge behavior near implanted contacts on infrared detectors. Haegel, Nancy M. // Journal of Applied Physics;8/15/1988, Vol. 64 Issue 4, p2153 

    Presents information on a study which proposed a phenomenological model for the steady-state distribution of electric field and potential near and implanted contact on a low-temperature infrared detector. Schematic diagram of a p-type photoconductor with implanted contacts; Physics of the...

  • Ultrabroadband coherent electric field from far infrared to 200 THz using air plasma induced by 10 fs pulses. Matsubara, Eiichi; Nagai, Masaya; Ashida, Masaaki // Applied Physics Letters;7/2/2012, Vol. 101 Issue 1, p011105 

    We generated an ultrabroadband infrared pulse ranging from far infrared to 200 THz through a plasma by focusing a hollow-fiber compressed intense 10-fs pulse and its second harmonic in air. We coherently detected the signal up to 100 THz with electro-optic sampling and clarified its drastic...

  • Low frequency noise in InSb/GaAs and InSb/Si channels. Dobbert, J.; Tran, L.; Hatami, F.; Masselink, W. T.; Kunets, Vas. P.; Salamo, G. J. // Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p102101 

    The low frequency noise features of InSb grown on GaAs and Si substrates using molecular-beam epitaxy are investigated in the temperature range from 80 to 300 K. In all samples the flicker noise dominates the spectra, with Hooge factors as low as 2×10-5 and 9×10-5 for InSb on GaAs and...

  • Injection mechanism at contacts in a quantum-well intersubband infrared detector. Rosencher, E.; Luc, F. // Applied Physics Letters;7/27/1992, Vol. 61 Issue 4, p468 

    Investigates the injection mechanism at contacts in a quantum well intersubband infrared detector. Enhancement of electric field at the cathode electrode; Variation of carrier density in the quantum well; Study of the photocurrent over dark current ratios.

  • Voltage tunable quantum well infrared detector. Parihar, S. R.; Lyon, S. A.; Santos, M.; Shayegan, M. // Applied Physics Letters;12/4/1989, Vol. 55 Issue 23, p2417 

    Measurements on a single quantum well infrared detector with its peak responsivity at 5.3 μm show a large Stark shift under bias. The detector has one graded barrier to enhance the effect of an electric field on the subband spacing. Several times greater change in the intersubband transition...

  • Highly sensitive hot electron bolometer based on disordered graphene. Qi Han; Teng Gao; Rui Zhang; Yi Chen; Jianhui Chen; Gerui Liu; Yanfeng Zhang; Zhongfan Liu; Xiaosong Wu; Dapeng Yu // Scientific Reports;12/20/2013, p1 

    A bolometer is a device that makes an electrical resistive response to the electromagnetic radiation resulted from a raise of temperature due to heating. The combination of the extremely weak electron-phonon interactions along with its small electron heat capacity makes graphene an ideal...

  • End Product.  // Chemical Heritage;Spring2007, Vol. 25 Issue 1, p48 

    A photograph of a technician at PerkinElmer working on an infrared sensor is presented.

  • Effect of an Electric Field on the Carrier Collection Efficiency of InAs Quantum Dots. Moskalenko, E. S.; Karlsson, K. F.; Donchev, V.; Holtz, P. O.; Schoenfeld, W. V.; Petroff, P. M. // Physics of the Solid State;Nov2005, Vol. 47 Issue 11, p2154 

    Individual and multiquantum dots of InAs are studied by means of microphotoluminescence in the case where, in addition to the principal laser exciting photoluminescence, second infrared laser is used. It is demonstrated that the absorption of the infrared photons effectively creates free holes...

  • Antenna-coupled microcavities for enhanced infrared photo-detection. Yuk Nga Chen; Yanko Todorov; Askenazi, Benjamin; Vasanelli, Angela; Biasiol, Giorgio; Colombelli, Raffaele; Sirtori, Carlo // Applied Physics Letters;1/20/2014, Vol. 104 Issue 3, p031113-1 

    We demonstrate mid-infrared detectors embedded into an array of double-metal nano-antennas. The antennas act as microcavities that squeeze the electric field into thin semiconductor layers, thus enhancing the detector responsivity. Furthermore, thanks to the ability of the antennas to gather...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics