Morphology of molecular beam epitaxy grown NiAl on GaAs studied by scanning tunneling microscopy

Hirono, S.; Tanimoto, M.
July 1993
Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p69
Academic Journal
Examines the morphology of molecular beam epitaxy grown nickel-aluminum on gallium arsenide by scanning tunneling microscopy. Insensitivity of reflection high energy electron diffraction streaks to the trenches; Effect of the substrate temperature on terraces; Association of trench formation with high-temperature growth.


Related Articles

  • Dislocation network at InN/GaN interface revealed by scanning tunneling microscopy. Liu, Y.; Cai, Y.; Lixin Zhang; Xie, M. H.; Wang, N.; Zhang, S. B.; Wu, H. S. // Applied Physics Letters;6/9/2008, Vol. 92 Issue 23, p231907 

    For heteroepitaxy of InN on GaN(0001) by molecular-beam epitaxy, the lattice misfit strain is relieved by misfit dislocations (MDs) formed at the interface between InN and GaN. Imaging by scanning tunneling microscopy (STM) of the surfaces of thin InN epifilms reveals line feature parallel to...

  • Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunneling microscopy. Ulloa, J. M.; Koenraad, P. M.; Hopkinson, M. // Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083103 

    The nitrogen distribution in GaAsN/GaAs quantum wells (QWs) grown by molecular beam epitaxy is studied on the atomic scale by cross-sectional scanning tunneling microscopy. No nitrogen clustering is observed in the range of N contents studied (between 1.0% and 2.5%, as measured by counting the...

  • Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy. Talochkin, A. B.; Mashanov, V. I. // Applied Physics Letters;12/30/2014, Vol. 105 Issue 26, p1 

    GeSn alloys grown on Si(100) by the low-temperature (100°C) molecular beam epitaxy are studied using scanning tunneling microscopy and Raman spectroscopy. It is found that the effect of Sn as a surfactant modifies substantially the low-temperature growth mechanism of Ge on Si. Instead of the...

  • Capping process of InAs/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy. Gong, Q.; Offermans, P.; Nötzel, R.; Koenraad, P. M.; Wolter, J. H. // Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5697 

    The capping process of self-assembled InAs quantum dots (QDs) grown on GaAs(100) substrates by molecular-beam epitaxy is studied by cross-sectional scanning tunneling microscopy. GaAs capping at 500 °C causes leveling of the QDs which is completely suppressed by decreasing the growth...

  • Electronic states of oxidized GaN(0001) surfaces. Dong, Y.; Feenstra, R. M.; Northrup, J. E. // Applied Physics Letters;10/23/2006, Vol. 89 Issue 17, p171920 

    The structure and electronic properties of oxidized (0001) surfaces of GaN grown by plasma-assisted molecular beam epitaxy are investigated by scanning tunneling microscopy/spectroscopy, Auger electron spectroscopy, and first-principles theory. For oxygen exposure at room temperature an...

  • High temperature scanning tunneling microscopy during molecular beam epitaxy. Voigtlander, Bert; Zinner, Andre; Weber, Thomas // Review of Scientific Instruments;Jul96, Vol. 67 Issue 7, p2568 

    Examines a system that is capable of simultaneous molecular beam deposition and scanning tunneling microscopy (STM) imaging. Effects of the active compensation of thermal drift on the residual drift in the images; Measurements at varying sample temperatures; Feasibility of simultaneous...

  • Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during.... Voigtlander, Bert; Zinner, Amdre // Applied Physics Letters;11/29/1993, Vol. 63 Issue 22, p3055 

    Presents a scanning tunneling microscope capable of simultaneously imaging and molecular beam epitaxy growth at 600-900 Kelvin sample temperature. Formation of the Stranski-Krastanov layer; Inversion of the aspect ratio of the islands with increasing coverage; Advantage of the device.

  • Effects of surface reconstruction on III-V semiconductor interface formation: The role of... Nosho, B.Z.; Weinberg, W.H. // Applied Physics Letters;3/22/1999, Vol. 74 Issue 12, p1704 

    Studies the effects of surface reconstruction on III-V semiconductor interface formation using molecular-beam epitaxy and in situ scanning tunneling microscopy. Controlling the roughness on the atomic scale; Probability of the occurrence of roughness in all heterostructures where the growth...

  • Scanning tunneling microscopy and spectroscopy of the electronic structure of dislocations in GaN/Si(111) grown by molecular-beam epitaxy. Ya-Ping Chiu; Bo-Chih Chen; Bo-Chao Huang; Min-Chuan Shih; Li-Wei Tu // Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082107 

    By using cross-sectional scanning tunneling microscopy, a correlation between the surface morphology and the corresponding electronic states of the dislocations terminated at the [formula] cleavage surfaces grown by molecular-beam epitaxy has been demonstrated. Both scanning tunneling...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics