TITLE

Morphology of molecular beam epitaxy grown NiAl on GaAs studied by scanning tunneling microscopy

AUTHOR(S)
Hirono, S.; Tanimoto, M.
PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p69
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the morphology of molecular beam epitaxy grown nickel-aluminum on gallium arsenide by scanning tunneling microscopy. Insensitivity of reflection high energy electron diffraction streaks to the trenches; Effect of the substrate temperature on terraces; Association of trench formation with high-temperature growth.
ACCESSION #
4167569

 

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