Improvement of the growth of In[sub x]Ga[sub 1]-[sub x]As on GaAs (001) using Te as surfactant

Grandjean, N.; Massies, J.
July 1993
Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p66
Academic Journal
Examines the growth of In[sub x]Ga[sub 1]-[sub x]As epitaxial layers on gallium arsenide using tellurium as surfactant. Inhibition of three-dimensional islands by the action of the surfactant; Delay of plastic relaxation by surfactants; Maintenance of the two-dimensional layer-by-layer growth for In[sub x]Ga[sub 1]-[sub x]As layers.


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