TITLE

Sub-microm wide channels with surface potential compensated by focused Si ion beam implantation

AUTHOR(S)
Fujisawa, Toshimasa; Saku, Tadashi
PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p51
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the use of silicon ion beam implantation to produce mesoscopic channel heterostructures. Independence of Shubnikov-de-Haas (SdH) oscillations on ion dose; Determination of electron mobility of the channel by SdH oscillation; Impact of gate voltage on the width of the channels.
ACCESSION #
4167563

 

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