Sub-microm wide channels with surface potential compensated by focused Si ion beam implantation

Fujisawa, Toshimasa; Saku, Tadashi
July 1993
Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p51
Academic Journal
Examines the use of silicon ion beam implantation to produce mesoscopic channel heterostructures. Independence of Shubnikov-de-Haas (SdH) oscillations on ion dose; Determination of electron mobility of the channel by SdH oscillation; Impact of gate voltage on the width of the channels.


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