Low threshold quasi-three-level 946 nm laser operation of an epitaxially grown

Hanna, D.C.; Large, A.C.
July 1993
Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p7
Academic Journal
Examines the 946 nanometer laser operation of an epitaxially grown ND:Y[sub 3]Al[sub 5]O[sub 12] planar waveguide. Comparison of the spectroscopic characteristics between gallium-doped YAG and Nd:YAG epitaxial layers; Termination of laser transition in Yb:YAG in the ground state; Fabrication of Nd:YAG waveguides by liquid phase epitaxial growth of Nd:YAG layers.


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