On temperature dependence of the optically active behavior of an infrared active defect in silicon

Yi Shi; Fengmei Wu
April 1995
Applied Physics Letters;4/10/1995, Vol. 66 Issue 15, p1945
Academic Journal
Examines the optically active behaviors of infrared active defect at different temperatures in fast neutron irradiated silicon. Discussion on the relaxation characteristics of photoexcited carriers; Use of Fourier-transform infrared spectrometer to measure infrared absorption; Relationship between electron concentration and high order bands.


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