TITLE

On temperature dependence of the optically active behavior of an infrared active defect in silicon

AUTHOR(S)
Yi Shi; Fengmei Wu
PUB. DATE
April 1995
SOURCE
Applied Physics Letters;4/10/1995, Vol. 66 Issue 15, p1945
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the optically active behaviors of infrared active defect at different temperatures in fast neutron irradiated silicon. Discussion on the relaxation characteristics of photoexcited carriers; Use of Fourier-transform infrared spectrometer to measure infrared absorption; Relationship between electron concentration and high order bands.
ACCESSION #
4164391

 

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