New leakage mechanism in sub-5-nm oxynitride dielectrics

Tue Nguyen; Carl, Daniel A.
October 1993
Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1972
Academic Journal
Examines leakage mechanism in thin (3.5-6.5 nanometer/nm) oxynitride dielectrics prepared by rapid thermal annealing of silicon oxide films. Context of the theory for electronic conduction in 15 nm oxynitride films; Characteristics of oxynitride films; Details on the probability of tunneling through sub-2-nm dielectrics.


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