TITLE

GaAs heteroepitaxy on an epitaxial Si surface with a low-temperature process

AUTHOR(S)
Mori, Hidefumi; Tachikawa, Masami
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1963
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines GaAs (gallium arsenide) heteroepitaxy in an epitaxial Si (silicon) surface (ESS) with a low-temperature process. Importance of reducing the temperature of silicon surface treatment; Ways to investigate the crystalline quality of the GaAs layer on the ESS; Structure of the epitaxial silicon surface.
ACCESSION #
4164265

 

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