TITLE

Low energy (100 eV) C[sup +] ion doping into GaAs using combined ion beam and molecular beam

AUTHOR(S)
Iida, Tsutomu; Makita, Yunosuke
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1951
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Focuses on the development of the combined ion and molecular beam epitaxy (CIBMBE) system for the low-energy (100 eV) carbon ion (C[sup +]) into GaAs (gallium arsenide). Reasons for using carbon as an acceptor dopant in GaAs; Components of the CIBMBE system; Advantages of the CIBMBE.
ACCESSION #
4164261

 

Related Articles

  • In situ Si Doping in GaAs using Low-energy Focused Si Ion Beam/Molecular Beam Epitaxy Combined System. Kubo, Kuniyuki; Yanagisawa, Junichi; Wakaya, Fujio; Yuba, Yoshihiko; Gamo, Kenji // AIP Conference Proceedings;2003, Vol. 680 Issue 1, p662 

    Using 200 eV focused Si ion beam (Si FIB) combined with molecular beam epitaxy (MBE) system, high-dose Si implantation in GaAs at laterally selected area was performed masklessly and the doped layer was buried by successive overlayer regrowth. From a depth profile of carriers using a...

  • Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy. Fujiwara, K.; Nishikawa, Y.; Tokuda, Y.; Nakayama, T. // Applied Physics Letters;3/17/1986, Vol. 48 Issue 11, p701 

    Effects of substrate preparation conditions, i.e., wet chemical and ultrahigh vacuum cleaning preparations, on GaAs oval defects grown by molecular beam epitaxy (MBE) were investigated. It is found that, with our MBE system, the presence of the smaller (<10 μm) ovally shaped defects without...

  • Nucleation and initial growth of GaAs on Si substrate. Rosner, S. J.; Koch, S. M.; Harris, J. S. // Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1764 

    The microstructure of thin layers of GaAs grown on Si substrates at low growth temperatures by molecular beam epitaxy was examined using transmission electron microscopy and MeV 4He+ ion channeling angular scan analysis. Crystalline island formation is observed at temperatures as low as 325...

  • Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy. Allen, L. T. P.; Weber, E. R.; Washburn, J.; Pao, Y. C. // Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p670 

    Device quality (110)GaAs has been reproducibly grown by molecular beam epitaxy (MBE) for the first time. Angling of the substrate to expose stable, Ga-rich ledges on the (110) surface has been shown to be the necessary condition for two-dimensional growth. The layers exhibit a room-temperature...

  • Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities. Chen, H. Z.; Ghaffari, A.; Morkoç, H.; Yariv, A. // Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2094 

    Single quantum well, graded refractive index separate confinement heterostucture (SQW GRINSCH) lasers with well thicknesses in the range of 65–480 Å have been grown by molecular beam epitaxy (MBE) on (100) and off of (100) by 4° toward (111) A substrates. The threshold current...

  • Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures. Kaminska, M.; Liliental-Weber, Z.; Weber, E. R.; George, T.; Kortright, J. B.; Smith, F. W.; Tsaur, B-Y.; Calawa, A. R. // Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1881 

    GaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high...

  • Defects in molecular beam epitaxy grown GaAlAs layers. Feng, S. L.; Zazoui, M.; Bourgoin, J. C. // Applied Physics Letters;7/3/1989, Vol. 55 Issue 1, p68 

    Using deep level transient spectroscopy we characterized the shallow native traps in n-type doped Ga1-xAlxAs layers (with x=0.30 and 0.36) grown by molecular beam epitaxy. A trap lying at 0.18 eV below the conduction band is detected which exists in large concentration within 0.2 μm from the...

  • Direct observation of precipitates and self-organized nanostructures in molecular-beam epitaxy.... Gwo, S.; Miwa, S. // Applied Physics Letters;11/20/1995, Vol. 67 Issue 21, p3123 

    Presents a direct observation of precipitates and self-organized nanostructures in molecular-beam epitaxy grown heavily doped gallium arsenide:silicon. Shape of the precipitate; Distinction of the precipitates from low diffusivity of randomly distributed silicon dopants; Discovery of a...

  • Native point defects in low-temperature-grown GaAs. Liu, X.; Prasad, A. // Applied Physics Letters;7/10/1995, Vol. 67 Issue 2, p279 

    Investigates the dominant defects in low-temperature-grown gallium arsenide (GaAs). Application of molecular beam epitaxy; Relationship between changes in the lattice parameter and arsenic[sub Ga] concentration; Structural properties of low temperature GaAs.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics