Barrier height enhancement of Schottky diodes on n-In[sub 0.53]Ga[sub 0.47]As by cryogenic

Lee, H.J.; Anderson, W.A.
October 1993
Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1939
Academic Journal
Examines barrier height enhancement of Schottky diodes on n-In[sub 0.53]Ga[sub 0.47]As (indium gallium arsenide) by cryogenic processing. Approaches to enhance the Schottky barrier height; Steps in diode fabrication; Factors attributing to the instability of the passivated low temperature diodes.


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