Detection of oxygen incorporated in molecular-beam epitaxy grown GaAs-on-AlAs interfaces and

Someya, T.; Akiyama, H.
October 1993
Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1924
Academic Journal
Determines the concentration of oxygen incorporated in GaAs/AlAs (gallium arsenide) interfaces and AlAs layers by secondary ion mass spectrometry (SIMS). Importance of minimizing the impurity incorporation from residual gas species in molecular-beam epitaxy; Details on the number of oxygen atoms adsorbed on the AlAs surfaces during growth interruption; Advantages of SIMS.


Related Articles

  • SIMS Profiling of GaAs/δ-AlAs/GaAs/... Heterostructures Using Polyatomic Ionized Oxygen Clusters. Ber, B. Ya.; Kovarsky, A. P.; Kazantsev, D. Yu.; Trushin, Yu. V.; Zhurkin, E. E.; Schmidt, A. A.; Belykh, S. F. // Technical Physics Letters;Oct2004, Vol. 30 Issue 10, p836 

    We have studied the possibility of using polyatomic ions as the primary projectile particles for the depth profiling of solid heterostructures by means of secondary ion mass spectrometry (SIMS) in combination with ion etching. Bombardment of a target by ionized oxygen clusters of the On+(n = 3,...

  • Hydrogen depth profiles and optical characterization of annealed, proton-implanted n-type GaAs. Zavada, J. M.; Jenkinson, H. A.; Sarkis, R. G.; Wilson, R. G. // Journal of Applied Physics;11/15/1985, Vol. 58 Issue 10, p3731 

    Presents information on a study which obtained the depth profiles of protons implanted in n-type gallium arsenide using secondary ion mass spectrometry. Depth profiles of implanted hydrogen; Optical properties of irradiated gallium arsenide samples; Conclusions.

  • Si-Si pair diffusion and correlation in AlxGa1-xAs and GaAs. Gavrilovic, P.; Gavrilovic, J.; Meehan, K.; Kaliski, R. W.; Guido, L. J.; Holonyak, N.; Hess, K.; Burnham, R. D. // Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p710 

    The Si impurity is diffused into GaAs at temperatures in the range 725≤T≤850 °C. Secondary ion mass spectrometry (SIMS) analysis is used to obtain the Si atom density in the Si-diffused layers. On the basis of the SIMS data and the observation of a distinct exciton peak in...

  • Characterization of Ga out-diffusion from GaAs into SiOxNy films during thermal annealing. Kuzuhara, Masaaki; Nozaki, Tadatoshi; Kamejima, Taibun // Journal of Applied Physics;12/15/1989, Vol. 66 Issue 12, p5833 

    Presents information on a study which discussed out-diffusion of gallium atoms during thermal annealing from a gallium arsenide (GaAs) substrate into an SiO[subx]N[suby] encapsulating film using secondary ion mass spectrometry (SIMS). Evaluation of deep-electron traps for the annealed...

  • Diffusion of implanted beryllium in gallium arsenide as a function of anneal temperature and dose. Deal, Michael D.; Robinson, Heyward G. // Applied Physics Letters;9/4/1989, Vol. 55 Issue 10, p996 

    The diffusion of implanted Be in GaAs was studied by annealing samples of GaAs implanted with low and high doses of Be. The high-dose (1×1014 cm-2) samples show an increase in diffusion with increasing anneal temperature from 700 to 900 °C. However, the low-dose (2×1013 cm-2) samples...

  • Characterization of GaAs implanted with molecular ions. Tamura, Akiyoshi; Onuma, Takeshi // Journal of Applied Physics;8/15/1988, Vol. 64 Issue 4, p2044 

    Presents information on a study which investigated fundamental electrical and optical characteristics of SiF[subx]- and SF[subx]- (x=1,2 and 3) implanted gallium arsenide layers. Electrical properties; Results of photoluminescence measurements carried out; Description of the secondary ion mass...

  • The use of azo-compounds as probes of carbon incorporation of nominally undoped metalorganic vapor phase epitaxy grown GaAs. Buchan, N. I.; Kuech, T. F.; Beach, D.; Scilla, G.; Cardone, F. // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2156 

    Presents information on a study which used secondary ion mass spectroscopy to quantitatively determine the carbon concentration in nominally undoped gallium arsenide (GaAs) grown by metalorganic vapor phase epitaxy (MOVPE). Growth of nominally undoped layers; Information on the MOVPE growth of...

  • Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy. Scilla, G. J.; Kuech, T. F.; Cardone, F. // Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1704 

    The quantitative analysis of carbon levels in thin layers of semiconductor materials is usually limited by poor detection limits. While several qualitative techniques for detecting carbon exist, secondary ion mass spectroscopy (SIMS) has been the primary tool for obtaining depth profiles of...

  • The effect of background doping and dose on diffusion of ion-implanted tin in gallium arsenide. Allen, E. L.; Deal, M. D.; Plummer, J. D. // Journal of Applied Physics;4/1/1990, Vol. 67 Issue 7, p3311 

    Presents a study which investigated the diffusion of ion-implanted tin in gallium arsenide as a function of implant dose and background doping. Chemical and carrier profiles obtained in secondary ion mass spectroscopy and electrochemical etch profiling; Diffusivity outside the implanted region;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics