TITLE

Detection of oxygen incorporated in molecular-beam epitaxy grown GaAs-on-AlAs interfaces and

AUTHOR(S)
Someya, T.; Akiyama, H.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1924
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Determines the concentration of oxygen incorporated in GaAs/AlAs (gallium arsenide) interfaces and AlAs layers by secondary ion mass spectrometry (SIMS). Importance of minimizing the impurity incorporation from residual gas species in molecular-beam epitaxy; Details on the number of oxygen atoms adsorbed on the AlAs surfaces during growth interruption; Advantages of SIMS.
ACCESSION #
4164252

 

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