TITLE

Ultrafast photodetection with an AlInAs/GaInAs heterojunction bipolar transistor

AUTHOR(S)
Carruthers, T.F.; Frankel, M.Y.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1921
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines ultrafast photodetection with an AlInAs/GaInAs (gallium indium arsenide) heterojunction bipolar transistor (HBT). Application of HBT as photodetectors; Ways to determine the duration of the fast emitter photocurrent transient; Use of a third terminal to achieve high photodetection bandwidths.
ACCESSION #
4164251

 

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