TITLE

On resolving hot carrier induced degradation mechanisms in silicon-on-sapphire

AUTHOR(S)
Chao, E.Y.; Li, G.P.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1912
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines hot carrier induced damage in silicon-on-sapphire metal-oxide-semiconductor field-effect transistors (MOSFETS). List of bulk silicon hot carrier induced device degradation mechanisms; Ways to assess the hot carrier induced device degradation; Effectiveness of hot light holes in silicon-on-sapphire MOSFETS.
ACCESSION #
4164248

 

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