Reduction of crossed-field diode transmitted current due to anode secondary emission

Gopinath, V.P.; Vanderberg, B.H.
January 1998
Physics of Plasmas;Jan1998, Vol. 5 Issue 1, p261
Academic Journal
Presents the reduction of crossed-field diode transmitted current due to anode secondary emission. Effects of secondary electrons on charge density and the resultant electric field; Contributions of secondary electrons to the space charge; Results of the reduction in transmitted current.


Related Articles

  • Spatial characteristics of electron beams from symmetric and nonsymmetric crossed-field secondary emission sources. Saveliev, Y. M.; Sibbett, W.; Parkes, D. M. // Journal of Applied Physics;2/1/2001, Vol. 89 Issue 3, p1550 

    The crossed-field secondary emission (CFSE) diode is a cold electron source based on a self-sustained secondary electron emission. The output electron beams are tubular and could be generated in a wide range of currents up to several hundred amperes. In this study, radial and azimuthal current...

  • Production and control of high current ion beams in plasma-optical systems. Goncharov, A. // Review of Scientific Instruments;Feb1998, Vol. 69 Issue 2, p1150 

    Investigates the production and control of high current ion beams in plasma-optical systems. Provision of a charge compensation by secondary electron emission; Consideration of a magnetically isolated diode gap (MDG) in the plasma-optical regime; Use of the MDG for hydrogen ion production.

  • Secondary electron dopant contrast imaging of compound semiconductor junctions. Chung, Suk; Wheeler, Virginia; Myers-Ward, Rachael; Nyakiti, Luke O.; Eddy, Charles R.; Gaskill, D. Kurt; Skowronski, Marek; Picard, Yoosuf N. // Journal of Applied Physics;Jul2011, Vol. 110 Issue 1, p014902 

    Secondary electron imaging combined with immersion lens and through-the-lens detection has been used to analyze various semiconductor junctions. Dopant contrast imaging was applied for multi-doped 4H-SiC, growth-interrupted n+/p and n/n+ homoepitaxial interfaces, and an AlGaAs/GaAs p-n junction...

  • Emissive ZnO-graphene quantum dots for white-light-emitting diodes. Son, Dong Ick; Kwon, Byoung Wook; Park, Dong Hee; Seo, Won-Seon; Yi, Yeonjin; Angadi, Basavaraj; Lee, Chang-Lyoul; Choi, Won Kook // Nature Nanotechnology;Jul2012, Vol. 7 Issue 7, p465 

    Hybrid nanostructures combining inorganic materials and graphene are being developed for applications such as fuel cells, batteries, photovoltaics and sensors. However, the absence of a bandgap in graphene has restricted the electrical and optical characteristics of these hybrids, particularly...

  • Secondary electron emission from dielectric materials of a Hall thruster with segmented electrodes. Dunaevsky, A.; Raitses, Y.; Fisch, N. J. // Physics of Plasmas;Jun2003, Vol. 10 Issue 6, p2574 

    The discharge parameters in Hall thrusters depend strongly on the yield of secondary electron emission from channel walls. Comparative measurements of the yield of secondary electron emission at low energies of primary electrons were performed for several dielectric materials used in Hall...

  • Total secondary-electron yield of metals measured by a dynamic method. Pintao, Carlos A. Fonzar; Hessel, Roberto // Journal of Applied Physics;7/1/2000, Vol. 88 Issue 1, p478 

    Discusses dynamic measurements of the total secondary-electron emission yield from metals where volume charges are prevented. Background on the dynamic method (DM) measurements; Comparison with the results obtained through pulse method.

  • Multiply charged ion-induced secondary electron emission from metals relevant for laser ion source beam diagnostics. La´ska, L.; Kra´sa, J.; Sto¨ckli, M. P.; Fehrenbach, C. W. // Review of Scientific Instruments;Feb2002, Vol. 73 Issue 2, p776 

    The number of secondary electrons, γ, emitted when multiply charged ions impact on metallic probe surface was measured to make the quantitative ion diagnostics based on this process more precise. The electron yield γ(q,E[sub i]) was measured for Ta[sup q+] and Xe[sup q+] ions (q = 6-41) in...

  • Erratum: “Electron inelastic scattering and secondary electron emission calculated without the single-pole approximation” [J. Appl. Phys. 104, 114907 (2008)]. Mao, S. F.; Li, Y. G.; Zeng, R. G.; Ding, Z. J. // Journal of Applied Physics;May2009, Vol. 105 Issue 9, p099902 

    A correction to the article "Electron inelastic scattering and secondary electron emission calculated without the single-pole approximation" printed online on May 8, 2009, is presented.

  • Effect of wall material on H- production in a multicusp source. Leung, K. N.; Ehlers, K. W.; Pyle, R. V. // Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p227 

    The effect of wall material on volume H[sup -] production in a magnetically filtered multicusp source has been investigated. Under the same discharge conditions, Al and Cu generally produce the highest H[sup -] ion current. It is shown that secondary electrons emitted from wall surfaces can...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics