Variation of magnetization reversal in pseudo-spin-valve elliptical rings

Yu, C.; Chiang, T. W.; Chen, Y. S.; Cheng, K. W.; Chen, D. C.; Lee, S. F.; Liou, Y.; Hsu, J. H.; Yao, Y. D.
June 2009
Applied Physics Letters;6/8/2009, Vol. 94 Issue 23, p233103
Academic Journal
We studied nanoscale elliptical ring shaped NiFe/Cu/NiFe trilayer pseudo-spin-valve structures. The magnetization reversal processes showed simultaneous-reversal single-step transition or double-step transition involving flux closure states. For various aspect ratios (short axis to long axis) and linewidths, transition between single-step and double-step magnetization reversals was measured to form a phase diagram. When the linewidth was reduced, edge roughness became important. Simulations of the magnetization reversal behavior agreed qualitatively with our results.


Related Articles

  • Magnetic and magneto-transport properties of electrodeposited magnetic nano-network on laser modified Au surface. Zhu, F. Q.; Fan, D. L.; Cammarata, R. C.; Chien, C. L. // Journal of Applied Physics;6/1/2004, Vol. 95 Issue 11, p6989 

    Magnetic nano-network structure has been fabricated by electrochemical deposition Ni onto laser modified Au film. Scanning electron microscopy images show that the network has a three-dimensional interconnecting branch structure with branch diameter of about 100 nm, constructed from grains with...

  • Effects of engineered Cu spacer on the interlayer coupling and giant magnetoresistance behavior in Pd/[Pd/Co]2/Cu/[Co/Pd]4 pseudo-spin-valves with perpendicular anisotropy. Thiyagarajah, Naganivetha; Bae, Seongtae // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p113906 

    Effects of perpendicular interlayer coupling formed between two perpendicularly magnetized ferromagnetic multilayers separated by engineered Cu spacer on the giant magnetoresistance (GMR) behavior were investigated in the Pd (3 nm)/[Pd (1.2 nm)/Co (0.6 nm)]2/Cu (x nm)/[Co (0.3 nm)/Pd (0.6...

  • Microstructure evolution and magnetoresistance of the A-site ordered Ba-doped manganites. Trukhanov, S. V.; Lobanovski, L. S.; Bushinsky, M. V.; Khomchenko, V. A.; Fedotova, V. V.; Troyanchuk, I. O.; Szymczak, H. // Semiconductors;May2007, Vol. 41 Issue 5, p507 

    The microstructure, crystal structure, and magnetotransport properties of microsized and nanosized Badoped manganites have been investigated. A “two-step” reduction-reoxidation procedure has been used to obtain nanosized ceramic manganite Nd0.70Ba0.30MnO3 (II). The parent microsized...

  • AP-pinned spin valve GMR and magnetization. Beach, Robert S.; Pinarbasi, Mustafa; Carey, Matthew J. // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p5723 

    We present a general analytical coherent rotation model for AP-pinned spin valve magnetoresistance (MR) and magnetization (M). The magnetic structure is determined by minimizing the sum of the Zeeman and the two interfacial exchange energies, σ[sub AF] and σ[sub AP]. We compare the model...

  • Microemulsion-mediated in-situ synthesis and magnetic characterization of polyaniline/Zn0.5Cu0.5Fe2O4 nanocomposite. Jiang, Jing; Ai, Lun-Hong // Applied Physics A: Materials Science & Processing;Aug2008, Vol. 92 Issue 2, p341 

    Polyaniline/Zn0.5Cu0.5Fe2O4 nanocomposite was synthesized by a simple, general and inexpensive in-situ polymerization method in w/o microemulsion. The effects of polyaniline coating on the magnetic properties of Zn0.5Cu0.5Fe2O4 nanoparticles were investigated. The structural, morphological and...

  • Switching of vertical giant magnetoresistance devices by current through the device. Bussmann, K.; Prinz, G.A. // Applied Physics Letters;10/18/1999, Vol. 75 Issue 16, p2476 

    Discusses the switching of vertical giant magnetoresistance devices by current through the device. Diameters of lithographically patterned devices; Process flow for fabrication of vertical giant magnetoresistance devices; Scanning electron micrograph of partially finished device structure.

  • Effect of B on the microstructure and magnetostriction of zoned Dy0.7Tb0.3Fe1.95. Arout Chelvane, J.; Palit, Mithun; Pandian, S.; Balamuralikrishnan, R.; Singh, A. K.; Chandrasekharan, V.; Narayana Jammalamadaka, S.; Markandeyulu, G. // Journal of Applied Physics;5/1/2007, Vol. 101 Issue 9, p09C512 

    It had been reported that B has beneficial effects on the magnetostriction of anisotropy compensated Dy0.7Tb0.3Fe2 alloys. In the present work, Dy0.7Tb0.3Fe1.95 and Dy0.7Tb0.3Fe1.95Bx (x=0.1, 0.15, and 0.2) alloys, in the form of 8 mm diameter cylindrical rods, were investigated both in the...

  • Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers. Byong Sun Chun; Seung Pil Ko; Young Keun Kim; Jae Youn Hwang; Jang Roh Rhee; Taewan Kim; Jae-Seon Ju // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08A902 

    A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous ferromagnetic NiFeSiB was investigated to reduce bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free layer 7/AlOx/CoFe 7/IrMn 10/Ru 60...

  • Hysteresis modeling of tunneling magnetoresistance strain sensor elements. Hauser, Hans; Rührig, Manfred; Wecker, Joachim // Journal of Applied Physics;6/1/2004, Vol. 95 Issue 11, p7258 

    Utilizing the inverse magnetostriction effect, magnetic tunneling junction (MTJ) elements have been demonstrated to also be useful as highly sensitive stress or strain transducers. The prediction of the stress dependent hysteresis of the tunneling magnetoresistance R is done by the energetic...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics