Ultrashort dead time of photon-counting InGaAs avalanche photodiodes

Dixon, A. R.; Dynes, J. F.; Yuan, Z. L.; Sharpe, A. W.; Bennett, A. J.; Shields, A. J.
June 2009
Applied Physics Letters;6/8/2009, Vol. 94 Issue 23, p231113
Academic Journal
We report a 1.036 GHz gated Geiger mode InGaAs avalanche photodiode with a detection dead time of just 1.93 ns. This is demonstrated by full recovery of the detection efficiency two gate cycles after a detection event, as well as a measured maximum detection rate of 497 MHz. As an application, we measure the second order correlation function g(2) of the emission from a diode laser with a single detector that works reliably at high speed owing to the extremely short dead time of the detector. The device is ideal for high bit rate fiber wavelength quantum key distribution and photonic quantum computing.


Related Articles

  • Improved APD designs boosts photon-counting detector efficiency. Hodges, Mike // Laser Focus World;May2012, Vol. 48 Issue 5, p66 

    The article discusses the influence of the avalanche-photodiode (APD) design on the photon-counting detector efficiency. The benefits of APD-based photon counters compared to other photon-counting technologies are outlined. According to the author, single-photon detection can be optimized when...

  • Solar-blind avalanche photodiode has gain of 2500.  // Laser Focus World;Dec2010, Vol. 46 Issue 12, p10 

    The article reports on the fabrication of solar-blind aluminum gallium nitride (AlGaN) avalanche photodiodes (APDs), by a group at Sun Yat-sen University in Guangzhou, China, which have reached multiplication gains higher than 2500 at a reverse bias of -62 volt.

  • Scaling of dark count rate with active area in 1.06 μm photon-counting InGaAsP/InP avalanche photodiodes. Dauler, E. A.; Hopman, P. I.; McIntosh, K. A.; Donnelly, J. P.; Duerr, E. K.; Magliocco, R. J.; Mahoney, L. J.; Molvar, K. M.; Napoleone, A.; Oakley, D. C.; O’Donnell, F. J. // Applied Physics Letters;9/11/2006, Vol. 89 Issue 11, p111102 

    Reducing the active area of InGaAsP/InP avalanche photodiodes operated in Geiger mode is investigated for reducing the dark count rate. The dark count rate in Geiger mode is found to scale linearly with the detector's active area for mesa diameters of 10, 15, and 20 μm. Scaling the mesa size...

  • Description of the Geiger mode in avalanche p-i-n photodiodes by elementary functions. Kholodnov, V. A. // Technical Physics Letters;Aug2009, Vol. 35 Issue 8, p744 

    We consider the possibility of using elementary functions to describe transient processes in p-i-n avalanche photodiodes (APDs), particularly those operating at an initial voltage V0 greater than the avalanche breakdown voltage VBD. This task is related to the need for determining the initial...

  • Geiger-mode operation of back-illuminated GaN avalanche photodiodes. Pau, J. L.; McClintock, R.; Minder, K.; Bayram, C.; Kung, P.; Razeghi, M.; Muñoz, E.; Silversmith, D. // Applied Physics Letters;7/23/2007, Vol. 91 Issue 4, p041104 

    The authors report the Geiger-mode operation of back-illuminated GaN avalanche photodiodes. The devices were fabricated on transparent AlN templates specifically for back illumination in order to enhance hole-initiated multiplication. The spectral response in Geiger-mode operation was analyzed...

  • Numerical analysis of single photon detection avalanche photodiodes operated in the Geiger mode. Sugihara, K.; Yagyu, E.; Tokuda, Y. // Journal of Applied Physics;6/15/2006, Vol. 99 Issue 12, p124502 

    For a wide range of the thicknesses of the charge and the multiplication layers, detection efficiency and dark count probability are numerically investigated for GaInAs/InP single photon detection avalanche photodiodes (APD’s) which are operated in the Geiger mode. Breakdown probability...

  • Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection. Hayden, Oliver; Agarwal, Ritesh; Lieber, Charles M. // Nature Materials;May2006, Vol. 5 Issue 5, p352 

    Integrating nanophotonics with electronics could enhance and/or enable opportunities in areas ranging from communications and computing to novel diagnostics. Light sources and detectors are important elements for integration, and key progress has been made using semiconducting nanowires and...

  • A study of avalanche photodetectors with a large photosensitive surface in the photon counting mode. Gulakov, I.; Zalesskii, V.; Zenevich, A.; Leonova, T. // Instruments & Experimental Techniques;Mar2007, Vol. 50 Issue 2, p249 

    The possibility of operating author-designed avalanche photodetectors with a large photosensitive surface (7-mm2 area) in the photon counting mode at room temperatures is shown. The characteristics of these photodetectors and ΦД-115Л avalanche photodiodes are compared in the photon...

  • Avoiding the blinding attack in QKD. Yuan, Z. L.; Dynes, J. F.; Shields, A. J. // Nature Photonics;Dec2010, Vol. 4 Issue 12, p800 

    The article provides information on the systems to avoid blinding attacks on the quantum key distribution (QKD) detectors. It states that an attack can be successful on single-photon avalanche photodiodes (APDs) when a redundant resistor is included with the APD. It also states that attack with...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics