High-energy negative ion beam obtained from pulsed inductively coupled plasma for charge-free etching process

Vozniy, O. V.; Yeom, G. Y.
June 2009
Applied Physics Letters;6/8/2009, Vol. 94 Issue 23, p231502
Academic Journal
Negative ions in conventional inductively coupled plasma are often more chemically active than positive ions (for example, in CF4 or SF6 plasmas), but inconveniently they are trapped inside the sheath and cannot be used for high-energy surface etching in sources with a grid-type acceleration system. In this work we describe a method of positive and negative ion extraction that allows the energy and flux of oppositely charged particles to be varied independently. Then by scattering the ions off from a metal surface, it is possible to form a high-energy beam of neutrals from the negative ions by using the low-energy positive component of the beam current for better charge compensation.


Related Articles

  • Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes. Miller, M. A.; Crawford, M. H.; Allerman, A. A.; Cross, K. C.; Banas, M. A.; Shul, R. J.; Stevens, J.; Bogart, K. H. A. // Journal of Electronic Materials;Apr2009, Vol. 38 Issue 4, p533 

    Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al xGa1− xN-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and...

  • Two-dimensional hybrid model of inductively coupled plasma sources for etching. Ventzek, Peter L.G.; Sommerer, Timothy J. // Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p605 

    Investigates the two-dimensional hybrid model for inductively coupled plasma sources employed in etching. Details of the two-dimensional hybrid model; Inclusions of several simulations for radiofrequency discharges; Accounts of the hydrodynamic-chemical kinetics stimulation.

  • Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition. Fang, Z.-Q.; Look, D. C.; Wang, X.-L.; Han, Jung; Khan, F. A.; Adesida, I. // Applied Physics Letters;3/10/2003, Vol. 82 Issue 10, p1562 

    By using deep-level transient spectroscopy (DLTS), deep centers have been characterized in unintentionally doped n-GaN samples grown by metalorganic chemical-vapor deposition and subjected to inductively coupled plasma reactive ion etching. At least six DLTS traps exist in the control sample:...

  • Novel low-frequency oscillation in a radio-frequency inductively coupled plasma with tuned substrate. Ding, Z. F.; Huo, W. G.; Wang, Y. N. // Physics of Plasmas;Jun2004, Vol. 11 Issue 6, p3270 

    The rf self-bias on the substrate in a rf inductively coupled plasma is controlled by varying the impedance of an external tuning inductor and capacitor network inserted between the substrate and the ground. In term of variations of tuned substrate self-bias (Vtsb) with tuning capacitance (Ct),...

  • Effect of mesh bias on the properties of the lateral conductivity of intrinsic microcrystalline silicon films deposited by low-frequency inductively coupled plasma. Yan, W. S.; Xu, S.; Sern, C. C.; Wei, D. Y. // Applied Physics Letters;11/14/2011, Vol. 99 Issue 20, p201501 

    A meshgrid is installed to study the effect of mesh bias on the lateral conductivity properties of intrinsic microcrystalline silicon films deposited by low frequency inductively coupled plasma. When a mesh bias is increased from 0 to -15 V, the dark conductivity remarkably decreases by three...

  • Inductively coupled plasma reactive ion etching of III-nitride semiconductors. Shah, A. P.; Laskar, M. R.; Rahman, A. A.; Gokhale, M. R.; Bhattacharya, A. // AIP Conference Proceedings;Feb2013, Vol. 1512 Issue 1, p494 

    III-Nitride semiconductor materials are resistant to most wet chemical etch processes, and hence the only viable alternative is to use dry etching for device processing. However, the conventional Reactive Ion Etching (RIE) process results in very slow etch-rates because of low reactive ion...

  • Transport of sputtered particles in capacitive sputter sources. Trieschmann, Jan; Mussenbrock, Thomas // Journal of Applied Physics;2015, Vol. 118 Issue 3, p033302-1 

    The transport of sputtered aluminum inside a multi frequency capacitively coupled plasma chamber is simulated by means of a kinetic test multi-particle approach. A novel consistent set of scattering parameters obtained for a modified variable hard sphere collision model is presented for both...

  • Rapid Ablative Laser Technique (ICP-MS) for Monitoring Material Homogeneity in Polypropylene. Pillay, A. E.; Vukusic, S.; Stephen, S.; Abd-Elhameed, A. // Chemical Sciences Journal;2010, p1 

    Efficient mixing of additives in polymer material is essential for uniform distribution. This paper explores the capability of using a high-resolution ICP-MS (Inductively Coupled Plasma - Mass Spectrometry) laser ablation technique to assess the uniformity of distribution of selected metal...

  • Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors. Kutty, M. N.; Plis, E.; Khoshakhlagh, A.; Myers, S.; Gautam, N.; Smolev, S.; Sharma, Y. D.; Dawson, R.; Krishna, S.; Lee, S. J.; Noh, S. K. // Journal of Electronic Materials;Oct2010, Vol. 39 Issue 10, p2203 

    We report on the comparison of mesa sidewall profiles of InAs/GaSb strained-layer superlattice (SLS) detector structures ( λ ≈ 14 μm at V = 0 V and T = 30 K) obtained after (a) a conventional BCl-based inductively coupled plasma etch, (b) a chemical etch (HO:HCl:HO, 1:1:4), and (c) a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics