Multilevel resistive switching with ionic and metallic filaments

Ming Liu; Abid, Z.; Wei Wang; Xiaoli He; Qi Liu; Weihua Guan
June 2009
Applied Physics Letters;6/8/2009, Vol. 94 Issue 23, p233106
Academic Journal
The resistive random access memory (ReRAM) device with three distinguishable resistance states is fabricated by doping Cu into a portion of the ZrO2 oxide layer of the Ti/ZrO2/n+-Si structure. The temperature-dependent measurement results demonstrate that filaments due to ionic trap-controlled space charge limited current conduction and metallic bridge are formed at different voltages. The formation and rupture of these different conducting filamentary paths in parallel are suggested to be responsible for the multilevel switching with the large resistance ratio, which can be used to establish a reliable multilevel ReRAM solution with variation tolerance.


Related Articles

  • Study of Current-Voltage Characteristics Of Ferromagnetic α-Fe1.64Ga0.36O3 Oxide Under Magnetic fields. Vijayasri, G.; Bhowmik, R. N. // AIP Conference Proceedings;2015, Vol. 1665, p1 

    We report the influence of magnetic field on I-V characteristics of α-Fe1.64Ga0.36O3 sample. Synchrotron X-ray diffraction pattern and Raman Spectroscopy have confirmed rhombohedral structure with space group R3C in the sample. The sample exhibits ferromagnetic feature at room temperature and...

  • Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications. Fan, Yang-Shun; Liu, Po-Tsun; Teng, Li-Feng; Hsu, Ching-Hui // Applied Physics Letters;7/30/2012, Vol. 101 Issue 5, p052901 

    Resistive random access memory using Al-doped zinc tin oxide (AZTO) as resistive switching layer was prepared by radio-frequency magnetron sputtering at room temperature. The Ti/AZTO/Pt device exhibits reversible and robust bi-stable resistance switching behavior over hundreds of switching...

  • Electrical properties of Ag/In2O3/M (M = LaNiO3, Pt) devices for RRAM applications. Mistry, Bhaumik V.; Joshi, U. S.; Trivedi, S. J.; Trivedi, U. N.; Pinto, R. // Solid State Phenomena;2014, Vol. 209, p94 

    Resistance switching properties of nanostructured In2O3 films grown on Pt and LaNiO3 (LNO) bottom electrodes have been investigated. High quality In2O3/LNO/SiO2 and In2O3/Pt/Ti/SiO2/Si heterostructures were grown by pulsed laser deposition. High purity Ag was thermally evaporated on In2O3 active...

  • Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions. Yiming Huai; Albert, Frank; Nguyen, Paul; Pakala, Mahendra; Valet, Thierry // Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3118 

    The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1×0.2 μm2 and resistance–area product RA in the range of 0.5–10 Ω μm2 (ΔR/R=1%–20%). Current-induced magnetization switching...

  • Ultrafast bit addressing in a magnetic memory matrix. Schumacher, H. W. // Journal of Applied Physics;8/1/2005, Vol. 98 Issue 3, p033910 

    An ultrafast bit addressing scheme for magnetic random access memories (MRAMs) in a crossed wire geometry is proposed. In the addressing scheme a word of cells is programmed simultaneously by subnanosecond field pulses making use of the magnetization precession of the free layer. Single-spin...

  • Transition between onion states and vortex states in exchange-coupled Ni–Fe/Mn–Ir asymmetric ring dots. Sasaki, Isao; Nakatani, Ryoichi; Endo, Yasushi; Kawamura, Yoshio; Yamamoto, Masahiko; Takenaga, Takashi; Aya, Sunao; Kuroiwa, Takeharu; Beysen, Sadeh; Kobayashi, Hiroshi // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08G303 

    The transition between onion states and vortex states in exchange-coupled Ni–Fe/Mn–Ir asymmetric ring dots has been investigated. A direction of domain wall motion, during the transition from the single-domain state to the vortex state via the onion state, depends on a sweep...

  • Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates. Sun, Nian X.; Liu, Ming; Xue, Xu; Peng, Bin; Zhu, Mingmin; Zhang, Yijun; Ren, Wei; Zhou, Ziyao; Ren, Tao; Yang, Xi; Nan, Tianxiang // Scientific Reports;11/20/2015, p16480 

    E-field control of interfacial exchange coupling and deterministic switching of magnetization have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic heterostructures, including NiFe/NiCoO/glass/PZN-PT (011) and NiFe/FeMn/glass/PZN-PT (011)....

  • A Digital Auto-Zeroing Circuit to Reduce Offset in Sub-Threshold Sense Amplifiers. Beshay, Peter; Ryan, Joseph F.; Calhoun, Benton H. // Journal of Low Power Electronics & Applications;Jun2013, Vol. 3 Issue 2, p159 

    Device variability in modern processes has become a major concern in SRAM design leading to degradation of both performance and yield. Variation induced offset in the sense amplifiers requires a larger bitline differential, which slows down SRAM access times and causes increased power...

  • Impact of Resistive-Bridging Defects in SRAM at Different Technology Nodes. Alves Fonseca, Renan; Dilillo, Luigi; Bosio, Alberto; Girard, Patrick; Pravossoudovitch, Serge; Virazel, Arnaud; Badereddine, Nabil // Journal of Electronic Testing;Jun2012, Vol. 28 Issue 3, p317 

    We present a study on the effects of resistive-bridging defects in the SRAM core-cell, considering different industrial technology nodes: 90 nm, 65 nm and 40 nm. We have performed an extensive number of electrical simulations, varying the resistance value of the defects, the supply voltage, the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics