Electrical stability of inkjet-patterned organic complementary inverters measured in ambient conditions

Tse Nga Ng; Sambandan, Sanjiv; Lujan, Rene; Arias, Ana Claudia; Newman, Christopher R.; He Yan; Facchetti, Antonio
June 2009
Applied Physics Letters;6/8/2009, Vol. 94 Issue 23, p233307
Academic Journal
Complementary organic inverters were fabricated by inkjet patterning of both the metal contacts and the semiconductors. Bottom-gate, bottom-contact organic thin-film transistors with Ta2O5-polymer bilayer dielectrics, inkjet-printed silver electrodes, and inkjet-printed organic semiconductors exhibit hole and electron mobilities as high as ∼10-2 cm2/V s. Complementary inverters based on these transistors operate in ambient and exhibit a gain of -4.4 with supply voltage VDD=+20 V and -3 dB cutoff at 100 kHz with a load of 0.02 pF. The electrical stability of the inverters was evaluated for analog and digital operation, and a noise margin ≥1.1 V at VDD=+15 V was measured with bias-stress effects included.


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