TITLE

Electron transport in carbon nanotube-silicon heterodimensional heterojunction array: An experimental investigation

AUTHOR(S)
Teng-Fang Kuo; Tzolov, Marian B.; Straus, Daniel A.; Xu, Jimmy
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/8/2009, Vol. 94 Issue 23, p232105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Current-voltage experiments on a highly ordered array of carbon nanotubes interfaced with silicon reveal interesting features arising from the regular array of heterojunctions between one-dimensional (1D) and three-dimensional materials. At high temperature, the vertically aligned and ordered nanotubes behave as an array of point junction contacts to the silicon below, which merge into a planar junction as temperature decreases. This model is further supported by the observation of signature space charge limited conduction, whose origin is attributed to deep levels in the silicon substrate and to the strong field enhancement due to the quasi-1D nanotubes.
ACCESSION #
41573032

 

Related Articles

  • Efficient photovoltage multiplication in carbon nanotubes. Yang, Leijing; Wang, Sheng; Zeng, Qingsheng; Zhang, Zhiyong; Pei, Tian; Li, Yan; Peng, Lian-Mao // Nature Photonics;Nov2011, Vol. 5 Issue 11, p672 

    Carbon nanotubes are direct-bandgap materials that are not only useful for nanoelectronic applications, but also have the potential to make a significant impact on the next generation of photovoltaic technology. A semiconducting single-walled carbon nanotube (SWCNT) has an unusual band...

  • Capacitance spectroscopy of amorphous/crystalline silicon heterojunction solar cells at forward bias and under illumination. Gudovskikh, A. S.; Kleider, J. P. // Applied Physics Letters;1/15/2007, Vol. 90 Issue 3, p034104 

    An original method of characterization of interface properties of hydrogenated amorphous silicon/crystalline silicon heterojunction solar cells is proposed. This is based on the measurement of the capacitance under AM1.5 illumination at forward bias close to the open-circuit voltage. The...

  • A C70-carbon nanotube complex for bulk heterojunction photovoltaic cells. Lau, Xinbo C.; Wang, Zhiqian; Mitra, Somenath // Applied Physics Letters;12/9/2013, Vol. 103 Issue 24, p243108 

    A C70 fullerene-multi-walled carbon nanotube (C70-CNT) complex has been used as a component of the photoactive layer in a bulk heterojunction photovoltaic cell. As compared to a control device with only C70, the addition of CNTs led to improvements in short circuit current density (Jsc), open...

  • Carbon nanotube based ultra-low voltage integrated circuits: Scaling down to 0.4 V. Ding, Li; Liang, Shibo; Pei, Tian; Zhang, Zhiyong; Wang, Sheng; Zhou, Weiwei; Liu, Jie; Peng, Lian-Mao // Applied Physics Letters;6/25/2012, Vol. 100 Issue 26, p263116 

    Carbon nanotube (CNT) based integrated circuits (ICs) including basic logic and arithmetic circuits were demonstrated working under a supply voltage low as 0.4 V, which is much lower than that used in conventional silicon ICs. The low limit of supply voltage of the CNT circuits is determined by...

  • Efficient CNTFET-based Ternary Full Adder Cells for Nanoelectronics. Moaiyeri, Mohammad Hossein; Mirzaee, Reza Faghih; Navi, Keivan; Hashemipour, Omid // Nano-Micro Letters;2011, Vol. 3 Issue 1, p43 

    This paper presents two new efficient ternary Full Adder cells for nanoelectronics. These CNTFET- based ternary Full Adders are designed based on the unique characteristics of the CNTFET device, such as the capability of setting the desired threshold voltages by adopting proper diameters for the...

  • Current-induced defect formation in multi-walled carbon nanotubes. Scuderi, Viviana; Tripodi, Lisa; Piluso, Nicolò; Bongiorno, Corrado; Di Franco, Salvatore; Scalese, Silvia // Journal of Nanoparticle Research;Feb2014, Vol. 16 Issue 2, p1 

    A voltage has been applied to a network of multiwalled carbon nanotubes (MWCNTs) placed between two electrodes. The current flowing through the MWCNTs is found to be responsible of irreversible effects, such as the suppression of radial breathing modes (RBM) in the Raman spectra. Furthermore, we...

  • Quantitative non-contact voltage profiling of quasi one-dimensional nanoelectronic devices. Huiseong Jeong; Ahn, Y. H.; Soonil Lee; Ji-Yong Park // Applied Physics Letters;5/26/2014, Vol. 104 Issue 21, p1 

    Local electrical characterization tools, such as Electrostatic force microscopy (EFM), can provide local electrical information of nanoelectronic devices, albeit mostly qualitative. For example, EFM images are convolution of local surface potential, capacitance, and contact potential variations...

  • Effect of top metal contact on electrical transport through individual multiwalled carbon nanotubes. Kulshrestha, Neha; Misra, Abhishek; Srinivasan, Senthil; Hazra, Kiran Shankar; Bajpai, Reeti; Roy, Soumyendu; Vaidya, Gayatri; Misra, D. S. // Applied Physics Letters;11/29/2010, Vol. 97 Issue 22, p222102 

    The effect of position of top metal contact on the electrical transport through individual multiwalled carbon nanotubes (MWNTs) has been investigated using gas injection system in situ in scanning electron microscope to deposit the top platinum metal contacts at different desired sites on the...

  • Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT's on Silicon Substrate by C-V and DLTS Measurements. Charfeddine, Manel; Gassoumi, Malek; Mosbahi, Hana; Gaquiére, Christophe; Zaidi, Mohamed Ali; Maaref, Hassen // Journal of Modern Physics (21531196);Oct2011, Vol. 2 Issue 10, p1229 

    We investigate high electron mobility transistors (HEMT's) based on AlGaN/GaN grown by molecular beam epitaxy on Silicon substrates. The improvement of the performances of such transistors is still subject to the influence of threading dislocations and point defects which are commonly observed...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics