Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

Sang-Heon Han; Dong-Yul Lee; Sang-Jun Lee; Chu-Young Cho; Min-Ki Kwon; Lee, S. P.; Noh, D. Y.; Dong-Joon Kim; Yong Chun Kim; Seong-Ju Park
June 2009
Applied Physics Letters;6/8/2009, Vol. 94 Issue 23, p231123
Academic Journal
The effect of an electron blocking layer (EBL) on the efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes (LEDs) is investigated. At low current density, the LEDs with a p-AlGaN EBL show a higher external quantum efficiency (EQE) than LEDs without an EBL. However, the EQE of LEDs without an EBL is higher than LEDs with an EBL as injection current density is increased. The improved EQE of LEDs without an EBL at high current density is attributed to the increased hole injection efficiency.


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