Dielectric response of AlSb from 0.7 to 5.0 eV determined by in situ ellipsometry

Jung, Y. W.; Ghong, T. H.; Byun, J. S.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Shin, S. H.; Song, J. D.
June 2009
Applied Physics Letters;6/8/2009, Vol. 94 Issue 23, p231913
Academic Journal
We present pseudodielectric function data <[variant_greek_epsilon]>=<[variant_greek_epsilon]1>+i<[variant_greek_epsilon]2> from 0.7 to 5.0 eV of oxide-free AlSb that are the closest representation to date of the intrinsic bulk dielectric response [variant_greek_epsilon] of the material. Measurements were done on a 1.5 μm thick film grown on (001) GaAs by molecular beam epitaxy. Data were obtained with the film in situ to avoid oxidation artifacts. Overlapping critical-point (CP) structures in the E2 energy region were identified by means of band-structure calculations done with the linear augmented Slater-type orbital method. Calculated CP energies agree well with those obtained from data, confirming the validity of the calculations


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