TITLE

Resonantly probing micropillar cavity modes by photocurrent spectroscopy

AUTHOR(S)
Kistner, C.; Reitzenstein, S.; Schneider, C.; Höfling, S.; Forchel, A.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p221103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate electrical readout of high quality quantum dot micropillars by means of photocurrent (PC) spectroscopy under resonant excitation. Applying this technique enables a high spectral resolution mapping of the optical mode spectrum of the micropillar revealing quality factors of up to 11 000 for a 3 μm diameter device. PC spectroscopy also shows that the contacted micropillars can act as light sensors with highly wavelength selective and photon sensitive detection capabilities down to 20 nW incident power. Moreover, bias voltage dependent PC studies provide an effective tool to study the competition between carrier tunneling out of the quantum dots and the radiative recombination.
ACCESSION #
41139495

 

Related Articles

  • Carrier density dependences of anisotropic optical properties in closely stacked InAs/GaAs one-dimensional quantum dot superlattices. Kotani, Teruhisa; Lugli, Paolo; Hamaguchi, Chihiro // Applied Physics Letters;7/15/2013, Vol. 103 Issue 3, p031110 

    We theoretically study the carrier density dependences of optical properties of closely stacked InAs/GaAs one-dimensional quantum dot superlattices based on the eight-band k·p theory. We find that the phonon assisted carrier injection into the ground state of both conduction and valence...

  • High-Power 1.5 μm InAs—InGaAs Quantum Dot Lasers on GaAs Substrates. Maksimov, M.V.; Shernyakov, Yu.M.; Kryzhanovskaya, N.V.; Gladyshev, A.G.; Musikhin, Yu.G.; Ledentsov, N.N.; Zhukov, A.E.; Vasil'ev, A.P.; Kovsh, A.R.; Mikhrin, S.S.; Semenova, E.S.; Maleev, N.A.; Nikitina, E.V.; Ustinov, V.M.; Alferov, Zh.I. // Semiconductors;Jun2004, Vol. 38 Issue 6, p732 

    Light–current, spectral, and temperature characteristics of long-wavelength (1.46–1.5 μm) lasers grown on GaAs substrates, with an active area based on InAs–InGaAs quantum dots, are studied. To reach the required lasing wavelength, quantum dots were grown on top of a...

  • Tuning the photoresponse of quantum dot infrared photodetectors across the 8–12 μm atmospheric window via rapid thermal annealing. Aivaliotis, P.; Zibik, E. A.; Wilson, L. R.; Cockburn, J. W.; Hopkinson, M.; Airey, R. J. // Applied Physics Letters;10/1/2007, Vol. 91 Issue 14, p143502 

    We report on wide spectral tunability of narrow-band (Δλ/λ∼12%) InAs/In0.15Ga0.85As/GaAs quantum dot-in-a-well infrared photodetectors using postgrowth rapid thermal annealing. The well resolved absorption and photocurrent peaks shift from 8 to 11.6 μm by annealing the devices...

  • Experiment and modeling of a diode-pumped 1.3 µm Nd:YVO4 laser passively Q-switched with PbS-doped glass. Savitski, V.G.; Malyarevich, A.M.; Yumashev, K.V.; Kalashnikov, V.L.; Sinclair, B.D.; Raaben, H.; Zhilin, A.A. // Applied Physics B: Lasers & Optics;Aug2004, Vol. 79 Issue 3, p315 

    A diode-pumped 1.34 μm Nd:YVO4 laser passively Q-switched with PbS quantum dots doped glass is presented. An average output power of 24 mWwith a Q-switching efficiency of 13% and a Q-switched pulse width of 15 ns was obtained. A four level spectroscopic model of a PbS quantum dots doped glass...

  • Long lifetimes of quantum-dot intersublevel transitions in the terahertz range. Zibik, E. A.; Grange, T.; Carpenter, B. A.; Porter, N. E.; Ferreira, R.; Bastard, G.; Stehr, D.; Winnerl, S.; Helm, M.; Liu, H. Y.; Skolnick, M. S.; Wilson, L. R. // Nature Materials;Oct2009, Vol. 8 Issue 10, p803 

    Carrier relaxation is a key issue in determining the efficiency of semiconductor optoelectronic device operation. Devices incorporating semiconductor quantum dots have the potential to overcome many of the limitations of quantum-well-based devices because of the predicted long quantum-dot...

  • Microsphere whispering-gallery-mode laser using HgTe quantum dots. Shopova, S. I.; Farca, G.; Rosenberger, A. T.; Wickramanayake, W. M. S.; Kotov, N. A. // Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6101 

    Ultralow-threshold continuous-wave lasing is achieved at room temperature in a fused-silica microsphere that is coated with HgTe quantum dots (colloidal nanoparticles). The 830 nm pump input and HgTe microlaser output are efficiently coupled into and out of whispering-gallery modes by tapered...

  • QD and QW lasers face off.  // Laser Focus World;Apr2004, Vol. 40 Issue 4, p7 

    Compares quantum well and quantum dot lasers of identical design. Material differential gain; Material differential carrier-induced refractive index.

  • Unity quantum yield of photogenerated charges and band-like transport in quantum-dot solids. Talgorn, Elise; Gao, Yunan; Aerts, Michiel; Kunneman, Lucas T.; Schins, Juleon M.; Savenije, T. J.; van Huis, Marijn A.; van der Zant, Herre S. J.; Houtepen, Arjan J.; Siebbeles, Laurens D. A. // Nature Nanotechnology;Nov2011, Vol. 6 Issue 11, p733 

    Solid films of colloidal quantum dots show promise in the manufacture of photodetectors and solar cells. These devices require high yields of photogenerated charges and high carrier mobilities, which are difficult to achieve in quantum-dot films owing to a strong electron-hole interaction and...

  • Mode-locked quantum-dot lasers. Rafailov, E. U.; Cataluna, M. A.; Sibbett, W. // Nature Photonics;Jul2007, Vol. 1 Issue 7, p395 

    Semiconductor lasers are convenient and compact sources of light, offering highly efficient operation, direct electrical control and integration opportunities. In this review we describe how semiconductor quantum-dot structures can provide an efficient means of amplifying and generating...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics