Tailoring the hole concentration in superlattices based on nitride alloys

Qing-Hong Zheng; Yi-An Yin; Li-Hong Zhu; Jin Huang; Xiao-Ying Li; Bao-Lin Liu
June 2009
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p222104
Academic Journal
By introducing Mg-doped InGaN/AlGaN strained-layer superlattice (SL) as p-type layer, the performance of p-type Ohmic contact is improved as compared with AlGaN/GaN and InGaN/GaN SLs. InGaN/AlGaN SL yields higher hole concentration due to larger oscillation of the valence band edge and smaller activation energy. The calculated average hole concentration in InGaN/AlGaN SL shows a twofold increase compared to that in AlGaN/GaN SL at the same Mg-doped level. The measured sheet hole density for ten periods of InGaN/AlGaN SL is as high as 4.4×1014 cm-2. Finally, Ni/Au contacts on Mg-doped InGaN/AlGaN SL with specific contact resistance of 7.3×10-5 Ω cm2 are realized.


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