TITLE

Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors

AUTHOR(S)
Khalafalla, M. A. H.; Ono, Y.; Nishiguchi, K.; Fujiwara, A.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p223501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The authors performed conductance measurements to identify the horizontal position of single boron acceptors in silicon-on-insulator nanoscale field-effect transistors at a temperature of 6 K. The horizontal position, i.e., how far the acceptor is from the source or drain terminal, is qualitatively obtained, and it is shown, on the level of single dopants, that the acceptor near the source significantly affects the subthreshold nature of the transistor.
ACCESSION #
41139482

 

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