Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors

Khalafalla, M. A. H.; Ono, Y.; Nishiguchi, K.; Fujiwara, A.
June 2009
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p223501
Academic Journal
The authors performed conductance measurements to identify the horizontal position of single boron acceptors in silicon-on-insulator nanoscale field-effect transistors at a temperature of 6 K. The horizontal position, i.e., how far the acceptor is from the source or drain terminal, is qualitatively obtained, and it is shown, on the level of single dopants, that the acceptor near the source significantly affects the subthreshold nature of the transistor.


Related Articles

  • Field-effect transistors with LaAlO3 and LaAlOxNy gate dielectrics deposited by laser molecular-beam epitaxy. Lu, X.B.; Lu, H.B.; Chen, Z.H.; Zhang, X.; Huang, R.; Zhou, H.W.; Wang, X.P.; Nguyen, B.Y.; Wang, C.Z.; Xiang, W.F.; He, M.; Cheng, B.L. // Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3543 

    High permittivity LaAlO3 (LAO) and LaAlOxNy (LAON) thin films have been deposited directly on a Si(100) substrate using a laser molecular-beam epitaxy technique. Metal–oxide–silicon field-effect transistors (MOSFETs) are fabricated using such LAO and LAON thin films as gate...

  • Boron delta-doped Si metal semiconductor field-effect transistor grown by molecular-beam epitaxy. Wu, S.L.; Carns, T.K. // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1363 

    Fabricates p-type silicon metal semiconductor field-effect transistor (MESFET) grown by molecular beam epitaxy. Transconductance of MESFET device; Estimation of sheet carrier density of the delta layer; Identification of the break-down voltage and a high two-dimensional carrier concentration of...

  • Submicron-gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal-semiconductor field-effect transistors grown by molecular beam epitaxy. Kuang, J. B.; Tasker, P. J.; Chen, Y. K.; Wang, G. W.; Eastman, L. F.; Aina, O. A.; Hier, H.; Fathimulla, A. // Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1136 

    We report the dc and microwave performance of i-InAlAs/n+-InGaAs/i-InAlAs heterojunction metal-semiconductor field-effect transistors (MESFETs) with gate lengths from 0.25 to 0.35 μm. At 10 GHz, an extrinsic transconductance (gm) of 507 mS/mm, a current gain cutoff frequency (ft) of 49.5 GHz,...

  • Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors. Appenzeller, J.; Martel, R.; Solomon, P.; Chan, K.; Avouris, Ph.; Knoch, J.; Benedict, J.; Tanner, M.; Thomas, S.; Wang, K. L.; Wang, K.L.; del Alamo, J. A.; del Alamo, J.A. // Applied Physics Letters;7/10/2000, Vol. 77 Issue 2 

    We present a scheme for the fabrication of ultrashort channel length metal-oxide-semiconductor field-effect transistors (MOSFETs) involving nanolithography and molecular-beam epitaxy. The active channel is undoped and is defined by a combination of nanometer-scale patterning and anisotropic...

  • Fabrication of IrSi3/p-Si Schottky diodes by a molecular beam epitaxy technique. Lin, T. L.; Iannelli, J. M. // Applied Physics Letters;5/14/1990, Vol. 56 Issue 20, p2013 

    IrSi3/p-Si Schottky diodes have been fabricated by a molecular beam epitaxy technique at 630 °C. Good surface morphology was observed for IrSi3 layers grown at temperatures below 680 °C, and an increasing tendency to form islands is observed in samples grown at higher temperatures. Good...

  • Depletion-mode ZnO nanowire field-effect transistor. Heo, Y. W.; Tien, L. C.; Kwon, Y.; Norton, D. P.; Pearton, S. J.; Kang, B. S.; Ren, F. // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2274 

    Single ZnO nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated using nanowires grown by site selective molecular-beam epitaxy. When measured in the dark at 25°C, he depletion-mode transistors exhibit good saturation behavior, a threshold voltage of ∼-3...

  • Theory of a quasihomogeneous field-effect transistor. Gribnikov, Z. S.; Haddad, G. I.; Eizenkop, J. // Journal of Applied Physics;Jan2008, Vol. 103 Issue 2, p024505 

    We consider the stationary characteristics and high-frequency conductance of dual-gate field-effect transistors with a substantially inhomogeneous capacitive connection between gates and a current-conducting channel for an electron enhancement control mode. In most cases, such transistors are...

  • GaAs/Ga0.47In0.53As lattice-mismatched Schottky barrier gates: Influence of misfit dislocations on reverse leakage currents. Chen, C. Y.; Chu, S. N. G.; Cho, A. Y. // Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1145 

    Epitaxial GaAs has been grown on Ga0.47In0.53As by molecular beam epitaxy to form a lattice-mismatched Schottky barrier gate for field-effect transistor applications. The study of cross-sectional transmission electron microscopy shows that the misfit dislocations accommodating the 3.7% lattice...

  • Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces. Chang, Y. C.; Chang, W. H.; Merckling, C.; Kwo, J.; Hong, M. // Applied Physics Letters;3/4/2013, Vol. 102 Issue 9, p093506 

    Inversion-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been fabricated using in-situ molecular beam deposited Al2O3 as a gate dielectric directly on freshly molecular beam epitaxy grown Ga-stabilized (4 × 6) and As-covered c(4 × 4) GaAs(100) reconstructed...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics