TITLE

Growth rate enhancement by nitrogen in diamond chemical vapor deposition—a catalytic effect

AUTHOR(S)
Dunst, S.; Sternschulte, H.; Schreck, M.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p224101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The diamond growth rate enhancement factor A([N2],[CH4]) of nitrogen has been measured in situ by laser reflection interferometry using thin reflecting iridium interlayers on on-axis and off-axis single crystals. “A” shows a characteristic linear decrease with the methyl radical concentration in the gas phase. The resulting local maximum in the growth rate curve yields conditions for which growth is accelerated when the methane concentration is decreased. In a model that fits the measurements quantitatively nitrogen catalyzes growth and competes with the hydrocarbon growth species for adsorption sites. The data allow excluding of several alternative models for nitrogen induced growth rate enhancement.
ACCESSION #
41139478

 

Related Articles

  • Role of Bifunctionality of ZrO2-Based Oxide Systems in NO Reduction with Lower Hydrocarbons. Orlik, S. N.; Struzhko, V. L.; Mironyuk, T. V.; Tel'biz, G. M. // Kinetics & Catalysis;Sep2003, Vol. 44 Issue 5, p682 

    The catalytic properties of transition metal oxides (Cr, Ce, and Co) supported on ZrO2 synthesized by various methods, as well as the effect of rhodium on the performance of the МeхOy/ZrO2 oxide systems in NO reduction with hydrocarbons (methane, propane–butane mixture, and...

  • Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories. Puglisi, R. A.; Lombardo, S.; Corso, D.; Crupi, I.; Nicotra, G.; Perniola, L.; De Salvo, B.; Gerardi, C. // Journal of Applied Physics;10/15/2006, Vol. 100 Issue 8, p086104 

    We study the role that the denuded zone around Si nanocrystals obtained by chemical vapor deposition plays on the fluctuations of the dot surface coverage. In fact, the capture mechanism of the silicon adatoms in the proximity of existing dots restricts the number of possible nucleation sites,...

  • Phase separation and ordering coexisting in In[sub x]Ga[sub 1-x]N grown by metal organic chemical... Behbehani, M.K.; Piner, E.L. // Applied Physics Letters;10/11/1999, Vol. 75 Issue 15, p2202 

    Studies phase separation and ordering coexisting in In[sub x]Ga[sub 1-x]N grown by metal organic chemical vapor deposition. Existence of simultaneous phase separation and ordering; Detection of phase separation by transmission electron microscopy selected area diffraction and x-ray diffraction.

  • Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications. Niu, D.; Ashcraft, R. W.; Kelly, M. J.; Chambers, J. J.; Klein, T. M.; Parsons, G. N. // Journal of Applied Physics;May2002, Vol. 91 Issue 9, p6173 

    This article describes the kinetics of reactions that result in substrate consumption during formation of ultrathin transition metal oxides on silicon. Yttrium silicate films (∼40 Å) with an equivalent silicon dioxide thickness of ∼11 Å are demonstrated by physical vapor...

  • Superior endurance performance of nonvolatile memory devices based on discrete storage in surface-nitrided Si nanocrystals. Jie Yu; Kunji Chen; Zhongyuan Ma; Xinxin Zhang; Xiaofan Jiang; Xinfan Huang; Yongxing Zhang; Lingling Wang // Journal of Applied Physics;1/28/2016, Vol. 119 Issue 4, p1 

    The surface-nitrided silicon nanocrystals (Si-NCs) floating gate nonvolatile memory (NVM) devices were fabricated by 0.13 µm node CMOS technology. The surface-nitrided Si-NCs were formed in-situ by low-pressure chemical vapor deposition and followed by nitridation treatment in NH3 ambient. It...

  • Impact of metal–oxide gate dielectric on minority carrier lifetime in silicon. Hegde, Rama I.; Hobbs, Christopher C.; Dip, LuRae; Schaeffer, Jamie; Tobin, Philip J. // Applied Physics Letters;5/20/2002, Vol. 80 Issue 20, p3850 

    Using a deposition followed by high-temperature drive in, we have examined the impact of metalorganic chemical vapor deposition (MOCVD) HfO[sub 2], MOCVD ZrO[sub 2], and physical vapor deposition (PVD) ZrxSi[sub 1-x]O[sub 2] gate dielectrics on the minority carrier lifetime. The lifetime...

  • Single-wafer processing of in situ-doped polycrystalline Si and Si1-xGex. Bensahel, D.; Campidelli, Y.; Hernandez, C.; Martin, F.; Sagnes, I.; Meyer, D.J. // Solid State Technology;Mar98, Vol. 41 Issue 3, pS5 

    Demonstrates the industrial feasibility of single wafer chemical vapor deposition (CVD) for key advanced bimetallic complementary metal oxide semiconductors (BiCMOS) and processing steps. Equipment and basic trends; Improvement of electrical performance in BiCMOS devices using in situ...

  • A BETTER WAY TO PRODUCE thin-film prototypes. Leiby, Mark W.; Hoffman, Jean M. // Machine Design;2/20/2003, Vol. 75 Issue 4, p114 

    Focuses on a chemical vapor deposition system used in creating thin-film circuits and other devices. Basics of the system; Medical applications using low-temperature polymer vapor-phase coating; Metal-oxide films for thermal and erosion barriers. INSET: Glossary of thin-film terms.

  • Subband gap photoresponse of nanocrystalline silicon in a metal-oxide-semiconductor device. Hossain, S. M.; Anopchenko, A.; Prezioso, S.; Ferraioli, L.; Pavesi, L.; Pucker, G.; Bellutti, P.; Binetti, S.; Acciarri, M. // Journal of Applied Physics;Oct2008, Vol. 104 Issue 7, p074917 

    In this paper we report on the photoconduction and photovoltaic properties of nanocrystalline silicon. Silicon nanocrystals (Si-ncs) have been prepared by using plasma-enhanced chemical vapor deposition on a p-type silicon substrate. The Si-ncs have been formed into the dielectric of a...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics