TITLE

Microcantilever array with embedded metal oxide semiconductor field effect transistor actuators for deflection control, deflection sensing, and high frequency oscillation

AUTHOR(S)
Chou, Stanley S.; Yun Young Kim; Srivastava, Arvind; Murphy, Benjamin; Balogun, Oluwaseyi; Tark, Soo-Hyun; Shekhawat, Gajendra; Dravid, Vinayak P.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p224103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A batch fabricated microcantilever array with embedded metal oxide semiconductor field effect transistor (MOSFET) is demonstrated to behave as an actuator as well as a strain sensor. Actuation is made possible through MOSFET self-heating effect and metal-silicon bimaterial thermal expansion mismatch. Precise cantilever deflection is achieved with gate modulated saturation current. Controllable deflection and oscillation are demonstrated, with amplitude of 212 nm measured through laser interferometry near first resonant frequency. Higher amplitude is attainable through higher bias. Such in situ actuation and sensing promises to have applications ranging from nanolithography to microfluidic mixing, among others, which require precise and controllable nanoscale deflection.
ACCESSION #
41139462

 

Related Articles

  • Simple toggle circuits illustrate low power-MOSFET leakage. Bruhns, Tom // EDN Europe;Sep2008, Vol. 55 Issue 9, p64 

    The article discusses the ability of simple toggle circuits to illustrate low power metal oxide semiconductor field-effect transistors (MOSFET) leakage. It presents circuits that will guide in demonstrating low gate leakage of modern power MOSFETS that can control higher voltages. Moreover, it...

  • Package Development Goes with the (Air) Row.  // Power Electronics Technology;Nov2004, Vol. 30 Issue 11, p8 

    Comments on the continued focus of metal oxide semiconductor field-effect transistor manufacturers on packaging of the devices in the United States. Launch of transistors in advanced surface-mount packages; Redesign of the products of semiconductor vendors; Handling of higher levels of current...

  • Clamp SIZING.  // Electronics World;Mar2011, Vol. 117 Issue 1899, p26 

    The article discusses the design of effective protection circuits with reliable metal oxide semiconductor field effect transistor (MOSFET) flyback power supplies in Great Britain. It states that one can use a clamp circuit to limit the amount of voltage that enters the MOSFET. Moreover, steps on...

  • Sub-Terahertz detection using 0.18 µm UMC MOSFET with 250nm gate length: Variable Power Sensitivity. Othman, M. A.; Harrison, I. // International Proceedings of Computer Science & Information Tech;2012, Vol. 32, p73 

    In this paper presented the sub-Terahertz (sub-THz) radiation detection at 220 GHz using 0.18 µm UMC Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The detector was design using CADENCE and the devices were sent to Europractice for fabrication. As a results the photoresponse of...

  • Four-mask-step power-MOSFET process boosts throughput by 30%... Goodenough, Frank // Electronic Design;12/4/95, Vol. 43 Issue 25, p42 

    Discusses power MOSFET designers. Technical information.

  • MOSFET gate-drve generator. Lakshminarayanan, V. // Electronic Design;12/4/95, Vol. 43 Issue 25, p109 

    Reports information pertaining to modern technology. MOSFETs discussed.

  • Voltage regulators offer low dropout.  // Electronic Design;12/4/95, Vol. 43 Issue 25, p140 

    Reports that with n-channel MOSFETs on the output as linear pass elements, the MSK 5020 voltage regulator achieves extremely low dropout-voltage specifications under high current conditions.

  • Dual-gate MOSFETs match gate drive to load level. Schweber, Bill; Granville, Fran // EDN;04/23/98, Vol. 43 Issue 9, p13 

    Offers information on dual-gate metal oxide semiconductor field effect-transistors (MOSFET) devices. Amount of current both gates handle; Estimated cost of the device; Availability of the device.

  • Random telegraph signal: An atomic probe of the local current in field-effect transistors. Mueller, H.H.; Schulz, M. // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1734 

    Presents information pertaining to the amplitude telegraph signals (RTSs) while highlighting the metal oxide field-effect transistors (MOSFETs). What the amplitudes of the RTSs depends upon; Information on the MOSFETs.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics