Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates

Yun Zhang; Shyh-Chiang Shen; Hee Jin Kim; Suk Choi; Jae-Hyun Ryou; Dupuis, Russell D.; Narayan, Bravishma
June 2009
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p221109
Academic Journal
We report low-noise GaN visible-blind homojunction p-i-n photodiodes. The devices are grown on a freestanding bulk GaN substrate and are fabricated using a “ledged” surface depletion technique to suppress the mesa sidewall leakage. For an 80-μm-diameter photodetector, the dark current density is lower than 40 pA/cm2. A room-temperature noise equivalent power of 4.27×10-17 W Hz-0.5 and a detectivity of 1.66×1014 cm Hz0.5 W-1 are achieved at a reverse bias of 20 V. The noise performance of the reverse-biased GaN p-i-n photodiodes are among the best values reported to date and demonstrate the potential of GaN photodiodes for low-noise high-speed UV detection.


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