TITLE

Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

AUTHOR(S)
Bharadwaja, S. S. N.; Venkatasubramanian, C.; Fieldhouse, N.; Ashok, S.; Horn, M. W.; Jackson, T. N.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p222110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low temperature charge transport in vanadium oxide (VOx) thin films processed using pulsed dc sputtering is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent resistivity ρ(T) of the VOx thin films is dominated by a Efros–Shklovskii variable range hopping mechanism [Efros and Shklovskii, J. Phys. C 8, L49 (1975)]. A detailed analysis in terms of charge hopping parameters in the low temperature regime is used to correlate film properties with the pulsed dc sputtering conditions.
ACCESSION #
41139439

 

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