TITLE

Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

AUTHOR(S)
Bharadwaja, S. S. N.; Venkatasubramanian, C.; Fieldhouse, N.; Ashok, S.; Horn, M. W.; Jackson, T. N.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p222110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low temperature charge transport in vanadium oxide (VOx) thin films processed using pulsed dc sputtering is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent resistivity ρ(T) of the VOx thin films is dominated by a Efros–Shklovskii variable range hopping mechanism [Efros and Shklovskii, J. Phys. C 8, L49 (1975)]. A detailed analysis in terms of charge hopping parameters in the low temperature regime is used to correlate film properties with the pulsed dc sputtering conditions.
ACCESSION #
41139439

 

Related Articles

  • Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers. Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Schaekers, Marc; Blasco, Nicolas; Detavernier, Christophe // Applied Physics Letters;3/18/2013, Vol. 102 Issue 11, p111910 

    Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH3 plasma at deposition temperatures between 70 °C and 150 °C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to...

  • Frequency-dependent conductivity in unannealed thin films of As0.40Se0.40Te0.20. Bilen, Bukem; Skarlatos, Yani; Aktas, Gulen // AIP Conference Proceedings;2007, Vol. 899 Issue 1, p588 

    D.c. and a.c. conductivity measurements have been performed on unannealed amorphous As0.40Se0.40Te0.20 thin films. The d.c. behaviour of the samples indicates hopping conduction mechanisms between 143K–210K and 210K–343K. The a.c. conductivity of the films is well represented by...

  • Effect of the metal-semiconductor phase transition on the rate of hydrogen penetration into vanadium dioxide thin films. Andreev, V. N.; Klimov, V. A. // Physics of the Solid State;Mar2010, Vol. 52 Issue 3, p605 

    The rates of hydrogen penetration from an aqueous solution of glycerin into thin films of vanadium dioxide in different phases have been compared. It has been found that the rate of hydrogen penetration into the metal phase of vanadium dioxide is at least one order of magnitude higher than that...

  • Ferroelectric behaviors and charge carriers in Nd-doped Bi4Ti3O12 thin films. Gao, X. S.; Xue, J. M.; Wang, J. // Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p034101 

    Nd-doped Bi4Ti3O12 thin films, (Bi3.25Nd0.85)4Ti3O12, of layered perovskite structure were synthesized by rf sputtering, followed by postannealing at 600–700 °C. They show enhanced ferroelectricity with rising postannealing temperature in the range of 650–750 °C. When...

  • Observation of large Hall sensitivity in thin Fe–Ge amorphous composite films. Hui Liu; Zheng, R. K.; Zhang, X. X. // Journal of Applied Physics;10/15/2005, Vol. 98 Issue 8, p086105 

    Amorphous FexGe1-x films with different metal volume fractions (0.40

  • Electrical characterization of band gap states in C-doped TiO2 films. Nakano, Yoshitaka; Morikawa, Takeshi; Ohwaki, Takeshi; Taga, Yasunori // Applied Physics Letters;8/1/2005, Vol. 87 Issue 5, p052111 

    We report on band gap states in C-doped TiO2 films that were prepared by oxidative annealing of sputtered TiC films at 550 °C in flowing O2 gas. Deep-level optical spectroscopy measurements revealed three deep levels located at ∼0.86, ∼1.30, and ∼2.34 eV below the conduction...

  • Effect of LP-buffer on the structure of ZnO thin films prepared on glass substrate using RF magnetron sputtering. Zhu Xingwen; Li Yingwei; Li Yongqiang; Ma Ji; Xia Yiben // Journal of Materials Science: Materials in Electronics;Oct2007, Vol. 18 Issue 10, p1021 

    The ZnO thin films with preferential C-orientation and smooth surface have been prepared using an RF magnetron sputtering method by the insertion of low-power (LP) sputtered ZnO buffer. The XRD results show that the C-orientation of the ZnO buffer layer deposited under the RF power of 30 W is...

  • THE INFLUENCE OF SPUTTERING BIAS-VOLTAGE ON LaB6 FILM'S CHARACTERISTICS. JING XU; GUANGHUI MIN; XIAOHUA ZHAO; LIJIE HU; HUASHUN YU // International Journal of Modern Physics B: Condensed Matter Phys;3/20/2009, Vol. 23 Issue 6/7, p1835 

    The deposition of lanthanum boride (LaB6) thin films by the d.c. magnetron sputtering were studied. XRD, AFM and Stylus Profiler were used to characterize the properties of the deposited films. The XRD was used to study the crystallinity. The results of the XRD showed that the dominant crystal...

  • Temperature dependence of refractive index in InN thin films grown by reactive sputtering. Zhou, H. P.; Shen, W. Z.; Ogawa, H.; Guo, O. X. // Journal of Applied Physics;9/15/2004, Vol. 96 Issue 6, p3199 

    Temperature-dependent reflection measurements have been carried out on InN thin films to determine its refractive index n and its temperature coefficient dn/dT. The studied InN thin films were grown by reactive sputtering on (111) GaAs substrates under various growth conditions. In addition to...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics