TITLE

High power efficiency in Si-nc/SiO2 multilayer light emitting devices by bipolar direct tunneling

AUTHOR(S)
Marconi, A.; Anopchenko, A.; Wang, M.; Pucker, G.; Bellutti, P.; Pavesi, L.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p221110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate experimentally bipolar (electrons and holes) current injection into silicon nanocrystals in thin nanocrystalline-Si/SiO2 multilayers. These light emitting devices have power efficiency of 0.17% and turn-on voltage of 1.7 V. The high electroluminescence efficiency and low onset voltages are attributed to the radiative recombination of excitons formed by both electron and hole injection into silicon nanocrystals via the direct tunneling mechanism. To confirm the bipolar character, different devices were grown, with and without a thick silicon oxide barrier at the multilayer contact electrodes. A transition from bipolar tunneling to unipolar Fowler–Nordheim tunneling is thus observed.
ACCESSION #
41139427

 

Related Articles

  • Townsend Coefficient and Runaway of Electrons at Relativistic Velocities. Tkachev, A. N.; Yakovlenko, S. I. // Technical Physics;Apr2005, Vol. 50 Issue 4, p508 

    An electron-multiplication regime at large field strengths, in which case an electron can acquire a relativistic kinetic energy over the multiplication length, is considered. It is shown that, even in such superstrong fields, the Townsend electron-multiplication mechanism is valid if the...

  • Townsend Coefficient and Efficiency of the Formation of Runaway Electrons in Neon. Tkachev, A. N.; Fedenev, A. A.; Yakovlenko, S. I. // Technical Physics;Apr2005, Vol. 50 Issue 4, p447 

    Basic ionization and drift properties are simulated for neon by the method of multiparticle dynamics. This calculation revealed that, in neon—in just the same way as in other gases that were studied previously—the Townsend ionization regime is realized even in strong fields if the...

  • Physics of high-pressure helium and argon radio-frequency plasmas. Moravej, M.; Yang, X.; Nowling, G. R.; Chang, J. P.; Hicks, R. F.; Babayan, S. E. // Journal of Applied Physics;12/15/2004, Vol. 96 Issue 12, p7011 

    The physics of helium and argon rf discharges have been investigated in the pressure range from 50 to 760 Torr. The plasma source consists of metal electrodes that are perforated to allow the gas to flow through them. Current and voltage plots were obtained at different purity levels and it was...

  • Study on molecular devices with negative differential resistance. Mahmoud, Ahmed; Lugli, Paolo // Applied Physics Letters;7/15/2013, Vol. 103 Issue 3, p033506 

    This paper provides a first-principles study for the transport behavior of molecular devices exhibiting wide bias range of negative differential resistance (NDR). The devices are composed of a diphenyl-dimethyl connected to carbon chains from each side, which are then linked to gold electrodes...

  • Time-of-flight analysis of charge mobility in a Cu-phthalocyanine-based discotic liquid crystal semiconductor. Fujikake, Hideo; Murashige, Takeshi; Sugibayashi, Makiko; Ohta, Kazuchika // Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3474 

    We used a time-of-flight method to study the charge carrier mobility properties of a molecular-aligned discotic liquid crystal semiconductor based on Cu-phthalocyanine. The heated isotropic-phase semiconductor material was sandwiched between transparent electrodes coated onto glass substrates...

  • Al[sub x]Ga[sub 1-x]As/Al[sub y]Ga[sub 1-y]As and GaAs pseudo-heterojunction bipolar transistors.... Gao, G.B.; Fan, Z.F.; Teraguchi, N.; Shen, T.C.; Morko, H. // Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p994 

    Examines the operation of Al[sub x]Ga[sub 1-x]As/Al[sub y]Ga[sub 1-y]As and GaAs pseudo-heterojunction bipolar transistors (HBT) with lateral emitter resistor. Measurement of the base current ideality factors, current gains and densities of HBT; Effect of emitter resistor on surface recombination.

  • Damping of surface acoustic vibration induced by electrons trapped on SnO2 nanocrystal surface. Gao, F.; Li, T. H.; Wu, X. L.; Cheng, Y. C.; Shen, J. C.; Chu, Paul K. // Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p211903 

    Broad full widths of half maxima (dampings) are observed from the low-frequency Raman spectra of hydrothermally prepared SnO2 nanocrystal congeries. No matrix exists between these nanocrystals and the complex-frequency model is thus unable to explain the damping in the low-frequency Raman peaks....

  • Dependence of the programming window of silicon-on-insulator nanocrystal memories on channel width. Fiori, G.; Iannaccone, G.; Molas, G.; De Salvo, B. // Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p113502 

    In this letter, we investigate the observed dependence of the programming window of silicon-on-insulator (SOI) nanocrystal memories on the width of the channel. Indeed, experiments show that the obtained threshold voltage shift after programming strongly increases with decreasing channel width....

  • Energy Distribution of Electrons Field-Emitted from Carbon Nanoemitters. Lobanov, V. M. // Technical Physics;Nov2005, Vol. 50 Issue 11, p1485 

    The height of an extra low-energy maximum in the energy distribution of electrons tunneling from crystalline carbon fibers and carbon nanotubes is studied as a function of emitter heating and emitter rotation relative to the energy analyzer axis. The relationships found are related to emission...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics