Doping selective lateral electrochemical etching of GaN for chemical lift-off

Park, Joonmo; Kwang Min Song; Seong-Ran Jeon; Jong Hyeob Baek; Sang-Wan Ryu
June 2009
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p221907
Academic Journal
An electrochemical etching based on oxalic acid was developed for use in the chemical lift-off of GaN epitaxial structures. It was shown that only the Si-doped n-GaN layer was etched away, while the p-type and undoped GaN layers were not etched at all. The etch rate and the remaining structure were analyzed for various doping concentrations and etching voltages. A lateral etch rate of 12 μm/min was achieved under 60 V for n-type doping concentration of 8×1018 cm-3. This doping selective etching was used to lift-off a GaN epitaxial layer patterned into 300×300 μm2 squares.


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