TITLE

InN nanocolumns grown by plasma-assisted molecular beam epitaxy on A-plane GaN templates

AUTHOR(S)
Grandal, J.; Sánchez-García, M. A.; Calleja, E.; Gallardo, E.; Calleja, J. M.; Luna, E.; Trampert, A.; Jahn, A.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p221908
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This work reports on the growth of wurtzite InN nanocolumns on A-plane GaN templates and on their structural and optical characterization by scanning and transmission electron microscopy, photoluminescence, and Raman spectroscopy. InN nanocolumns grown on A-plane substrates show sharp and pyramidal-like top surfaces that could be attributed to A-plane and M-plane facets, instead of the hexagonal top surfaces observed in nanocolumns grown on C-plane surfaces. The results of these characterization techniques show that the nanocolumns preserve the nonpolar growth orientation of the GaN templates. Good crystal quality is expected from the low temperature (13 K) photoluminescence dominant peak at 0.69 eV.
ACCESSION #
41139422

 

Related Articles

  • Room temperature luminescent InGaAs/GaAs core-shell nanowires. Jabeen, F.; Rubini, S.; Grillo, V.; Felisari, L.; Martelli, F. // Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083117 

    InGaAs/GaAs core-shell nanowires have been grown by molecular beam epitaxy. The core-shell nanowires show room temperature photoluminescence. At low temperatures their luminescence intensity is two to three orders of magnitudes larger than that of parent InGaAs nanowires grown without external...

  • Effect of post-annealing process on the optical properties of lateral composition-modulated GaInP structure grown by molecular beam epitaxy. Park, K. W.; Park, C. Y.; Ravindran, Sooraj; Lee, Y. T. // Journal of Materials Science;Feb2014, Vol. 49 Issue 3, p1034 

    We report the molecular beam epitaxy growth of lateral composition-modulated (LCM) GaInP structures induced by GaP/InP short-period superlattice (SPS), and the effect of post-annealing process on their optical properties. The samples are structurally analyzed using cross-sectional transmission...

  • Three-dimensional electronic properties of multiple vertically stacked InAs/GaAs self-assembled quantum dots. Kim, J. H.; Woo, J. T.; Kim, T. W.; Yoo, K. H.; Lee, Y. T. // Journal of Applied Physics;9/15/2006, Vol. 100 Issue 6, p063716 

    The microstructural properties and the shape of an InAs/GaAs array grown by molecular beam epitaxy were studied using transmission electron microscopy (TEM) measurements, and the interband transitions were investigated by using temperature-dependent photoluminescence (PL) measurements. The shape...

  • Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy. Park, K. W.; Park, C. Y.; Ravindran, Sooraj; Kang, S. J.; Hwang, H. Y.; Jho, Y. D.; Jo, Y. R.; Kim, B. J.; Lee, Y. T. // Journal of Applied Physics;2014, Vol. 116 Issue 4, p043516-1 

    We report the enhancement of the minority carrier lifetime of GaInP with a lateral composition modulated (LCM) structure grown using molecular beam epitaxy (MBE). The structural and optical properties of the grown samples are studied by transmission electron microscopy and photoluminescence,...

  • Growth and characterization of dilute nitride GaNxP1-x nanowires and GaNxP1-x/GaNyP1-y core/shell nanowires on Si (111) by gas source molecular beam epitaxy. Sukrittanon, S.; Kuang, Y. J.; Dobrovolsky, A.; Won-Mo Kang; Ja-Soon Jang; Bong-Joong Kim; Chen, W. M.; Buyanova, I. A.; Tu, C. W. // Applied Physics Letters;8/18/2014, Vol. 105 Issue 7, p1 

    We have demonstrated self-catalyzed GaNxPi1-x and GaNxP1-x/GaNyP1-y core/shell nanowiregrowth by gas-source molecular beam epitaxy. The growth window for GaNxP1-x nanowires wasobserved to be comparable to that of GaP nanowires (~585 °C to ~615 °C). Transmission electronmicroscopy showed a...

  • Exciton luminescence in Si1-xGex/Si heterostructures grown by molecular beam epitaxy. Rowell, N. L.; Noël, J.-P.; Houghton, D. C.; Wang, A.; Lenchyshyn, L. C.; Thewalt, M. L. W.; Perovic, D. D. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2790 

    Reports on the characterization of coherent Si[sub1-x]Ge[subx] alloys and multilayers synthesized by molecular beam epitaxy on silicon(100) substrates by low-temperature photoluminescence spectroscopy and transmission electron microscopy. Experiment; Results; Discussion.

  • Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy. Hierro, A.; Ulloa, J.-M.; Chauveau, J.-M.; Trampert, A.; Pinault, M.-A.; Tournié, E.; Guzmán, A.; Sánchez-Rojas, J. L.; Calleja, E. // Journal of Applied Physics;8/15/2003, Vol. 94 Issue 4, p2319 

    The impact of rapid thermal annealing on the optical emission of GaInNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with high In and N content is shown to be highly dependent on the crystal structure of the QWs, as determined by transmission electron microscopy. Due to the...

  • An annealing study of relaxation and interface quality in Si-Si1-xGex strained-layer superlattices. Lockwood, D. J.; Baribeau, J.-M.; Timbrell, P. Y. // Journal of Applied Physics;4/15/1989, Vol. 65 Issue 8, p3049 

    Presents a study that investigated the relaxation and interface quality of molecular-beam-epitaxy-grown silicon (Si)-Si[sub1-x]Ge[subx] superlattices. Measurement of the Raman scattering spectra; Analysis of the transmission electron micrographs; Evaluation of the x-ray diffraction data.

  • Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy. Lotsari, A.; Kehagias, Th.; Tsiakatouras, G.; Tsagaraki, K.; Katsikini, M.; Arvanitidis, J.; Christofilos, D.; Ves, S.; Komninou, Ph.; Georgakilas, A.; Dimitrakopulos, G. P. // Journal of Applied Physics;2014, Vol. 115 Issue 21, p213506-1 

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the "M"-shape dependence of the (11Ì„20) x-ray rocking curve widths on the beam...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics