TITLE

Characterization of near-infrared n-type β-FeSi2/p-type Si heterojunction photodiodes at room temperature

AUTHOR(S)
Shaban, Mahmoud; Nomoto, Keita; Izumi, Shota; Yoshitake, Tsuyoshi
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p222113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
n-type β-FeSi2/p-type Si heterojunctions were fabricated from β-FeSi2 films epitaxially grown on Si(111) by facing-target direct-current sputtering. Sharp film-substrate interfaces were confirmed by scanning electron microscopy. The current-voltage and photoresponse characteristics were measured at room temperature. They exhibited good rectifying properties and a change of approximately one order of magnitude in the current at a bias voltage of -1 V under illumination by a 6 mW, 1.31 μm laser. The estimated detectivity was 1.5×109 cm [Square_Root]Hz W at 1.31 μm. The results suggest that the β-FeSi2/Si heterojunctions can be used as near-infrared photodetectors that are compatible with silicon integrated circuits.
ACCESSION #
41139417

 

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