Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy

Song, H. P.; Yang, A. L.; Wei, H. Y.; Guo, Y.; Zhang, B.; Zheng, G. L.; Yang, S. Y.; Liu, X. L.; Zhu, Q. S.; Wang, Z. G.; Yang, T. Y.; Wang, H. H.
June 2009
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p222114
Academic Journal
In2O3 is a promising partner of InN to form InN/In2O3 heterosystems. The valence band offset (VBO) of wurtzite InN/cubic In2O3 heterojunction is determined by x-ray photoemission spectroscopy. The valence band of In2O3 is found to be 1.47±0.11 eV below that of InN, and a type-I heterojunction with a conduction band offset (CBO) of 0.49–0.99 eV is found. The accurate determination of the VBO and CBO is important for use of InN/In2O3 based electronic devices.


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