TITLE

Change in the resistivity of Ge-doped Sb phase change thin films grown by chemical vapor deposition according to their microstructures

AUTHOR(S)
Jin-Hyock Kim; Keun Lee; Su-Jin Chae; Il-Keoun Han; Jae-Sung Roh; Park, Sung-Ki; Byung Joon Choi; Cheol Seong Hwang; Eunae Cho; Seungwu Han
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p222115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This study examined the effects of the composition and microstructure on the electric resistivity of Ge-doped Sb phase change thin films grown by cyclic plasma enhanced chemical vapor deposition. Ge and Sb layers were deposited sequentially to form either a GexSby mixture or Ge/Sb nanolaminated films. While the resistivity of the nanolaminated films was higher, the GexSby mixture showed a lower resistivity than the pure Sb film. This can be explained by the increase in carrier density of the alloy, as confirmed by first-principles calculations. An abrupt change in resistance accompanying a phase change was observed at ∼210 °C.
ACCESSION #
41139415

 

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