TITLE

Phase transformations in II–V semiconductors under high pressure

AUTHOR(S)
Mollaev, A. Yu.; Saypulaeva, L. A.; Alibekov, A. G.; Marenkin, S. F.; Babushkin, A. N.
PUB. DATE
June 2009
SOURCE
Semiconductors;Jun2009, Vol. 43 Issue 6, p701
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The resistivity and Hall coefficient in n-CdAs2 and p-ZnAs2 are measured at room temperature under a hydrostatic pressure as high as 9 GPa and quasi-hydrostatic pressure as high as 50 GPa. For n-CdAs2, the phase transition is found at P = 5.5 GPa, and for p-ZnAs2, two phase transitions take place; the first at P = 10–15 GPa, and the second at P = 35–40 GPa.
ACCESSION #
41132763

 

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