GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays

Chul-Ho Lee; Jinkyoung Yoo; Young Joon Hong; Jeonghui Cho; Yong-Jin Kim; Seong-Ran Jeon; Jong Hyeob Baek; Gyu-Chul Yi
May 2009
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p213101
Academic Journal
We studied the fabrication and electroluminescent (EL) characteristics of GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n-GaN, GaN/In0.24Ga0.76N multiquantum well (MQW) structures and p-GaN layers were deposited coaxially over the entire surface of position-controlled ZnO nanotube arrays grown vertically on c-plane sapphire substrates. The nanoarchitecture LEDs exhibited strong green and blue emission from the GaN/GaN/In0.24Ga0.76N MQWs at room temperature. Furthermore, the origins of dominant EL peaks are also discussed.


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