Hot-electron characteristics in chemically resolved electrical measurements of thin silica and SiON layers

Rozenblat, A.; Rosenwaks, Y.; Cohen, H.
May 2009
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p213501
Academic Journal
We use the recently developed chemically resolved electrical measurements (CREM) to sensitively measure hot-electron transport characteristics in thin dielectric layers. By comparing bare gate-oxide layers, SiO2 and SiON, pronounced differences are revealed that are absent from standard contact measurements and from CREM conducted on top metallic pads. The “on pad” and standard measurements obey a similar defect-assisted “Poole–Frenkel” transport, whereas I∼Vα characterizes the hot-electron transport through the bare overlayer, with a clear thickness dependence of α. These unique CREM features offer useful advantages in gate-oxide characterization.


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