TITLE

Nonlocal bias spectroscopy of the self-consistent bound state in quantum point contacts near pinch off

AUTHOR(S)
Yoon, Y.; Kang, M.-G.; Ivanushkin, P.; Mourokh, L.; Morimoto, T.; Aoki, N.; Reno, J. L.; Ochiai, Y.; Bird, J. P.
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p213103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We perform nonlocal bias spectroscopy of the self-consistent bound state (BS) in quantum point contacts (QPCs), determining the lever arm (γ) that governs the gate-voltage induced shift in its energy. The value of γ allows us to infer an enhanced g factor, and large remnant spin splitting, for the BS. Our results show many similarities with bias spectroscopy of quantum dots and are reproduced by calculations that assume a discrete BS coupled to a reservoir. This study therefore provides independent evidence in support of the notion of BS formation in QPCs.
ACCESSION #
40637764

 

Related Articles

  • Optical Spectra of the Jaynes-Cummings Ladder. Laussy, Fabrice P.; del Valle, Elena // AIP Conference Proceedings;6/29/2009, Vol. 1147 Issue 1, p46 

    We explore how the Jaynes-Cummings ladder transpires in the emitted spectra of a two-level system in strong coupling with a single mode of light. We focus on the case of very strong coupling, that would be achieved with systems of exceedingly good quality (very long lifetimes for both the...

  • Delocalized Dislocations in Quantum Dots. Ovid'ko, I. A.; Sheinerman, A. G. // Journal of Experimental & Theoretical Physics;Feb2004, Vol. 98 Issue 2, p334 

    A theoretical model describing nucleation of the misfit dislocations with delocalized cores in island films is proposed. The parameters of nanoislands (quantum dots) with such delocalized misfit dislocations in the Ge/Si system are estimated. Within the framework of the proposed model,...

  • Electrical spin pumping of quantum dots at room temperature. Li, C. H.; Kioseoglou, G.; van 't Erve, O. M. J.; Ware, M. E.; Gammon, D.; Stroud, R. M.; Jonker, B. T.; Mallory, R.; Yasar, M.; Petrou, A. // Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p132503 

    We report on electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5%...

  • Enhancement in hole current density on polarization in poly(3-hexylthiophene):cadmium selenide quantum dot nanocomposite thin films. Kumari, Kusum; Chand, Suresh; Vankar, V. D.; Kumar, Vikram // Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p213503 

    We demonstrate the effect of polarization on space charge limited J-V behavior in poly(3-hexylthiophene) (P3HT):cadmium selenide (CdSe) (∼5 nm) quantum dot nanocomposite thin films in hole-only device configuration, indium tin...

  • Quantitative Description of Strong-Coupling of Quantum Dots in Microcavities. Laussy, F. P.; del Valle, E.; Tejedor, C. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p359 

    We have recently developed a self-consistent theory of Strong-Coupling in the presence of an incoherent pumping [arXiv:0807.3194] and shown how it could reproduce quantitatively the experimental data [PRL, 101 (2008)]. Here, we summarize our main results, provide the detailed analysis of the...

  • A First-Principle Study of B-and P-Doped Silicon Quantum Dots. Jieqiong Zeng; Hong Yu // Journal of Nanomaterials;2012, p1 

    Doping of silicon quantum dots (Si QDs) is important for realizing the potential applications of Si QDs in the fields of Si QDs-based all-Si tandem solar cells, thin-film transistors, and optoelectronic devices. Based on the first-principle calculations, structural and electronic properties of...

  • Quantum droplets of electrons and holes. Almand-Hunter, A. E.; Li, H.; Cundiff, S. T.; Mootz, M.; Kira, M.; Koch, S. W. // Nature;2/27/2014, Vol. 506 Issue 7489, p471 

    Interacting many-body systems are characterized by stable configurations of objects-ranging from elementary particles to cosmological formations-that also act as building blocks for more complicated structures. It is often possible to incorporate interactions in theoretical treatments of...

  • Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots. Shatalina, E. S.; Blokhin, S. A.; Nadtochy, A. M.; Payusov, A. S.; Savelyev, A. V.; Maximov, M. V.; Zhukov, A. E.; Ledentsov, N. N.; Kovsh, A. R.; Mikhrin, S. S.; Ustinov, V. M. // Semiconductors;Oct2010, Vol. 44 Issue 10, p1308 

    With the help of the photocurrent spectroscopy, the mechanism of emission of charge carriers from energy levels of the (In,Ga)As/(Al,Ga)As quantum dots of different design are studied. Thermal activation is shown to be the main mechanism of carrier emission from the quantum dots for the isolated...

  • Quantum dots show their true colours.  // Nature;11/11/2004, Vol. 432 Issue 7014, p247 

    The article presents a report on "quantum dots." These semiconductor nanometre-sized crystals, typically with a cadmium-based core, avoid some of the shortcomings associated with traditional organic dyes and fluorescent proteins. QDs are brighter, not prone to photobleaching, and come in a wide...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics