Possible incipient ferroelectricity in Mn-doped Na1/2Bi1/2Cu3Ti4O12

Ferrarelli, Matthew C.; Sinclair, Derek C.; West, Anthony R.
May 2009
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p212901
Academic Journal
The grain semiconductivity of Na1/2Bi1/2Cu3Ti4O12 ceramics is suppressed by several orders of magnitude by Mn-doping and Na1/2Bi1/2Cu2.82Mn0.18Ti4O12 ceramics exhibit high room temperature relative permittivity, [variant_greek_epsilon]r, ∼140. [variant_greek_epsilon]r data at 100 kHz fit the Barrett equation over the range ∼10–320 K and the magnitude and temperature dependence of [variant_greek_epsilon]r are consistent with incipient ferroelectricity in this compound.


Related Articles

  • Intergrowth Bi2WO6–Bi3TiNbO9 ferroelectrics with high ionic conductivity. Yi, Z. G.; Li, Y. X.; Wen, Z. Y.; Wang, S. R.; Zeng, J. T.; Yin, Q. R. // Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p192906 

    Two dielectric relaxation loss peaks associated with oxygen-ion diffusion in the intergrowth Bi2WO6–Bi3TiNbO9(Bi5TiNbWO15) bismuth layered ferroelectrics were observed. The activation energy and the relaxation time at infinite temperature, for these two peaks, were determined to be (0.89...

  • Interaction between Si doping and the polarization-induced internal electric field in the AlGaN/GaN superlattice. Zhang, Wei; Zhang, Yue; Xue, JunShuai; Zhang, Ying; Lv, Ling; Zhang, JinCheng; Hao, Yue // Applied Physics Letters;10/17/2011, Vol. 99 Issue 16, p162105 

    AlGaN/GaN superlattices (SLs) with and without Si doping exhibit very different properties. Because of the difference between the dielectric constants of AlGaN and GaN, the wells of the SL are depleted in the undoped structure. With increased Si doping in the GaN wells, the depletion effect will...

  • Effect of B-site Al-doping on electric polarization in DyMnO3. Zhang, N.; Wang, K. F.; Luo, S. J.; Wei, T.; Dong, X. W.; Li, S. Z.; Wan, J. G.; Liu, J.-M. // Applied Physics Letters;6/21/2010, Vol. 96 Issue 25, p252902 

    We investigate the effect of Al-doping on the multiferroicity of DyMn1-xAlxO3. It is indicated that a slight doping (0.005≤x≤0.01) can significantly enhance the electric polarization which will be suppressed as x>0.03. The possible mechanism for the polarization enhancement is the...

  • Effect of Nb doping of ferroelectric properties of Bi3.25La0.75Ti3O12 ceramics. Jong-Ho Park; Jong-Seong Bae; Byung-Chun Choi; Jung-Hyun Jeong // Journal of Applied Physics;3/15/2005, Vol. 97 Issue 6, p064110 

    Ferroelectric ceramics of Bi3.25La0.75Ti3-xNbxO12 (x=0.0,0.03) were synthesized using the solid-state reaction method. The influence of Nb doping on the P-E hysteresis and dielectric properties was investigated. The values of remanent polarization (Pr) and coercive (Ec) were 18 μC/cm2 and 140...

  • Ferroelectric properties of Bi3.25Sm0.75V0.02T2.98O12 thin film at elevated temperature. Cheng, Z. X.; Wang, X. L.; Dou, S. X.; Ozawa, K.; Kimura, H. // Applied Physics Letters;5/28/2007, Vol. 90 Issue 22, p222902 

    The ferroelectric behavior in terms of electrical polarization and fatigue and dielectric properties at elevated temperature of the ferroelectric Bi3.25Sm0.75V0.02T2.98O12 thin film fabricated by the pulsed laser deposition method were studied. Its switchable polarization increased at elevated...

  • Aging-induced two-step ferroelectric-to-paraelectric transition in acceptor-doped ferroelectrics. Jinghui Gao; Dezhen Xue; Huixin Bao; Lixue Zhang; Chao Zhou; Wenfeng Liu; Wei Chen; Xiaobing Ren // Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p082906 

    It is well known that first-order ferroelectric to paraelectric transition is a one-step transition and it gives rise to one latent heat peak and one permittivity peak during heating. In the present paper, however, we report an unexpected finding; in Mn-doped Ba(Zr0.01Ti0.98Mn0.01)O3-δ the...

  • Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature. Hyuk Park, Min; Joon Kim, Han; Jin Kim, Yu; Lee, Woongkyu; Moon, Taehwan; Seong Hwang, Cheol // Applied Physics Letters;6/17/2013, Vol. 102 Issue 24, p242905 

    The effects of annealing temperature (Tanneal) and film thickness (tf) on the crystal structure and ferroelectric properties of Hf0.5Zr0.5O2 films were examined. The Hf0.5Zr0.5O2 films consist of tetragonal, orthorhombic, and monoclinic phases. The orthorhombic phase content, which is...

  • Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films. Wang, D. Y.; Chan, N. Y.; Li, S.; Choy, S. H.; Tian, H. Y.; Chan, H. L. W // Applied Physics Letters;11/22/2010, Vol. 97 Issue 21, p212901 

    Doping effects with respect to the electrical properties of morphotropic phase boundary (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films epitaxially grown on CaRuO3 electroded (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has...

  • A model of elastic and relaxation polarization of ferroelectrics with a distribution of domain walls over relaxation times and natural frequencies. Tilles, V. F.; Metal'nikov, A. M.; Pecherskaya, R. M. // Physics of the Solid State;Jul2009, Vol. 51 Issue 7, p1503 

    A model that takes into account the distribution of domain walls over natural frequencies and relaxation times (or activation energies) is proposed. It is demonstrated that the function of the distribution of domain walls over natural frequencies and relaxation times ƒ(ω0, τ) (or...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics