Resistance switching at the Al/SrTiO3-xNy anode interface

Shkabko, A.; Aguirre, M. H.; Marozau, I.; Lippert, T.; Weidenkaff, A.
May 2009
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p212102
Academic Journal
The electroformation and resistance switching behavior of Al/SrTiO3-xNy/Al have been investigated. The resistance of Al/SrTiO3-xNy/Al irreversibly increases when voltages higher than a certain threshold voltage are applied. A bistable resistance switching develops at one of the Al electrodes that performs as the anode. The formation of stacking faults in SrTiO3-xNy during preparation by microwave plasma treatment is a prerequisite for the occurrence of switching as confirmed by site-specific high resolution transmission electron microscopy at the electrode interfaces. The resistance switching effect is discussed by considering the role of stacking fault defects in the oxygen/nitrogen diffusion at the anode metal-oxynitride interface.


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