TITLE

Optical band gap and magnetic properties of unstrained EuTiO3 films

AUTHOR(S)
Lee, J. H.; Ke, X.; Podraza, N. J.; Kourkoutis, L. Fitting; Heeg, T.; Roeckerath, M.; Freeland, J. W.; Fennie, C. J.; Schubert, J.; Muller, D. A.; Schiffer, P.; Schlom, D. G.
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p212509
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Phase-pure, stoichiometric, unstrained, epitaxial (001)-oriented EuTiO3 thin films have been grown on (001) SrTiO3 substrates by reactive molecular-beam epitaxy. Magnetization measurements show antiferromagnetic behavior with TN=5.5 K, similar to bulk EuTiO3. Spectroscopic ellipsometry measurements reveal that EuTiO3 films have a direct optical band gap of 0.93±0.07 eV.
ACCESSION #
40637732

 

Related Articles

  • Structural and magnetic properties of La0.7Sr0.3MnO3 thin films integrated onto Si(100) substrates with SrTiO3 as buffer layer. Belmeguenai, M.; Mercone, S.; Adamo, C.; Moch, P.; Schlom, D. G.; Monod, P. // Journal of Applied Physics;Apr2011, Vol. 109 Issue 7, p07C120 

    La0.7Sr0.3MnO3 (LSMO) thin films with a thickness d of 10, 20, 60, and 100 nm were grown on 20-nm-thick SrTiO3-buffered (100) silicon substrates by a reactive molecular beam epitaxy. For all samples, x-ray diffraction (XRD) revealed an excellent epitaxy with in-plane cubic [100] and [010] axes...

  • Structural and magnetic properties of epitaxially grown MnAs films on GaAs(110). Kolovos-Vellianitis, D.; Herrmann, C.; Däweritz, L.; Ploog, K. H. // Applied Physics Letters;8/29/2005, Vol. 87 Issue 9, p092505 

    MnAs films were grown by molecular beam epitaxy (MBE) on GaAs(110) substrates, since this orientation was recently identified as promising for the increase of spin lifetimes in semiconductor heterojunctions, which is of interest in spin injection experiments. A single epitaxial orientation was...

  • Excitonic characteristics in direct wide-band-gap CuScO2 epitaxial thin films. Hiraga, H.; Makino, T.; Fukumura, T.; Ohtomo, A.; Kawasaki, M. // Applied Physics Letters;11/23/2009, Vol. 95 Issue 21, p211908 

    Thin films of a delafossite compound CuScO2 were grown on spinel MgAl2O4 (111) substrates, yielding in highly crystalline and (0001)-oriented epitaxial structures. Absorption spectra at 20 K revealed a sharp exciton resonance at 3.97 eV, which persisted up to 300 K. Its direct transition band...

  • Structural and magnetic properties of Nd0.7Ce0.3MnO3 thin films. Yanagida, Takeshi; Kanki, Teruo; Vilquin, Bertrand; Tanaka, Hidekazu; Kawai, Tomoji // Journal of Applied Physics;3/1/2006, Vol. 99 Issue 5, p053908 

    This paper reports on the structural and magnetic properties of Nd0.7Ce0.3MnO3 (NCeMO) epitaxial thin films lacking Ce-rich impurities with the intention being to investigate the effect of ionic radius of the A site cation on the microstructures and magnetic properties in comparison with...

  • Enhancement of the magnetic properties in (Ga1-xMnx)N thin films due to Mn-delta doping. Jeon, H. C.; Kang, T. W.; Kim, T. W.; Joongoo Kang; Chang, K. J. // Applied Physics Letters;8/29/2005, Vol. 87 Issue 9, p092501 

    The effects of Mn delta-doping on the magnetic properties of (Ga1-xMnx)N thin films grown on GaN buffer layers by molecular-beam epitaxy were studied. The magnetization curve as a function of the magnetic field as 5 K indicated that ferromagnetisms existed in the Mn delta-doped (Ga1-xMnx)N and...

  • Growth and magnetic properties of epitaxial MnAs thin films grown on InP(001). Yokoyama, M.; Ohya, S.; Tanaka, M. // Applied Physics Letters;1/2/2006, Vol. 88 Issue 1, p012504 

    Epitaxial ferromagnetic MnAs thin films have been grown by molecular-beam epitaxy on semi-insulating InP(001) substrates. The MnAs c axis (MnAs[0001]) lies along the InP[110] axis, and the easy magnetization axis is in-plane, along the MnAs[1120] axis, which is parallel to the InP[110] axis. The...

  • Magnetic cantilever actuator with sharpened magnetic thin film ellipses. Chen-Yu Huang; Tzong-Rong Ger; Mei-Feng Lai; We-Yun Chen; Hao-Ting Huang; Jiann-Yeu Chen; Pei-Jen Wang; Zung-Hang Wei // Journal of Applied Physics;2015, Vol. 117 Issue 17, p17B740-1 

    A SiO2 cantilever covered by elliptical magnetic thin films was designed as an actuator. Under magnetic field, the elliptical magnetic film with sharp ends would exhibit single-domain structures and generate torque to push or pull the two arms of the cantilever. The cantilever could then stretch...

  • New double-heterostructure indium-tin oxide/InGaAsP/AlGaAs surface light-emitting diodes at 650-nm range. Ishikawa, Joji; Funyu, Yasuhito; Yonezawa, Rumiko; Takagi, Kazuo; Takahashi, N. Shin-ichi; Kurita, Shoichi // Journal of Applied Physics;9/1/1989, Vol. 66 Issue 5, p2181 

    Presents a study that assessed a double-heterostructure indium-tin oxide (ITO)/InGaAsP/AlGaAs surface light-emitting diodes fabricated by liquid-phase epitaxy and radio frequency sputtering methods. Information on the device fabrication; Analysis of the effect of heat treatment on the...

  • Ga0.47In0.53As ultrahigh gain, high sensitivity photoconductors grown by chloride vapor-phase epitaxy. Antreasyan, A.; Garbinski, P. A.; Mattera, V. D.; Olsson, N. A.; Temkin, H. // Journal of Applied Physics;8/15/1986, Vol. 60 Issue 4, p1535 

    Presents information on a study that reported highly sensitive planar, interdigitated Ga[sub0.47]In[sub0.54]As photoconductive detectors prepared by trichloride vapor-phase epitaxy. Experimental procedures; Experimental results.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics