TITLE

p-Si/β-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 μm electroluminescence of 0.4 mW at room temperature

AUTHOR(S)
Suzuno, Mitsushi; Koizumi, Tomoaki; Suemasu, Takashi
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p213509
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electroluminescence at an emission power of over 0.4 mW is achieved at an emission wavelength of 1.6 μm using a p-Si/β-FeSi2/n-Si double-heterostructure light-emitting diode. This emission power is obtained at room temperature under current injection of 460 mA, corresponding to an external quantum efficiency of approximately 0.1%. Photoluminescence and time-resolved photoluminescence measurements for devices with different thicknesses of β-FeSi2 indicate that radiative recombination rate increased as the thickness of the β-FeSi2 active layer is increased.
ACCESSION #
40637722

 

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