TITLE

Reduction in Shockley–Read–Hall generation-recombination in AlInSb light-emitting-diodes using spatial patterning of the depletion region

AUTHOR(S)
Nash, G. R.; Ashley, T.
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p213510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A technique for the reduction in Shockley–Read–Hall recombination in semiconductor diodes, in which areas of the depletion region are removed, is described and preliminary results obtained using AlInSb light-emitting-diodes (LEDs) are presented. Both the electrical and optical characteristics of the devices were significantly improved by removing parts of the depletion region using dry etching, with an average increase in the zero bias differential resistance and LED emission at low currents by a factor of 2.
ACCESSION #
40637720

 

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