High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications

Navarro, A.; Rivera, C.; Pereiro, J.; Muñoz, E.; Imer, B.; DenBaars, S. P.; Speck, J. S.
May 2009
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p213512
Academic Journal
The fabrication and characterization of metal-semiconductor-metal polarization-sensitive photodetectors based on A-plane GaN grown on R-plane sapphire substrates is reported. These photodetectors take advantage of the in-plane crystal anisotropy, which results in linear dichroism near the band gap energy. The high resistivity of the A-plane GaN material leads to extremely low dark currents. For an optimized finger spacing of 1 μm, dark current density and responsivity at 30 V are 0.3 nA/mm2 and 2 A/W, respectively. A maximum polarization sensitivity ratio of 1.8 was determined. In a differential configuration, the full width at half maximum of the polarization-sensitive region is 8.5 nm.


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