TITLE

High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications

AUTHOR(S)
Navarro, A.; Rivera, C.; Pereiro, J.; Muñoz, E.; Imer, B.; DenBaars, S. P.; Speck, J. S.
PUB. DATE
May 2009
SOURCE
Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p213512
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The fabrication and characterization of metal-semiconductor-metal polarization-sensitive photodetectors based on A-plane GaN grown on R-plane sapphire substrates is reported. These photodetectors take advantage of the in-plane crystal anisotropy, which results in linear dichroism near the band gap energy. The high resistivity of the A-plane GaN material leads to extremely low dark currents. For an optimized finger spacing of 1 μm, dark current density and responsivity at 30 V are 0.3 nA/mm2 and 2 A/W, respectively. A maximum polarization sensitivity ratio of 1.8 was determined. In a differential configuration, the full width at half maximum of the polarization-sensitive region is 8.5 nm.
ACCESSION #
40637717

 

Related Articles

  • Towards proper characterization of nonlinear metal-semiconductor contacts. Generalization of the transmission line method. Piotrzkowski, R.; Litwin-Staszewska, E.; Grzanka, Sz. // Applied Physics Letters;8/1/2011, Vol. 99 Issue 5, p052101 

    Modern optoelectronic devices are often based on wide-bandgap semiconductors such as GaN. In such cases the current injecting contacts are usually nonlinear, especially for p-type materials. Using the standard transmission line method (TLM), which gives satisfactory results in linear cases,...

  • Schottky and field-effect transistor fabrication on InP and GaInAs. Loualiche, S.; L’Haridon, H.; Le Corre, A.; Lecrosnier, D.; Salvi, M.; Favennec, P. N. // Applied Physics Letters;2/15/1988, Vol. 52 Issue 7, p540 

    Schottky contacts with barrier heights of 0.76 eV on n-type InP and 0.65 eV on n-type GaInAs are realized by a new surface treatment. These contacts are used as a gate for the fabrication of field-effect transistors (FET) on these materials. Extrinsic transconductances of 100 and 7.5 mS/mm are...

  • High contrast chiral nematic liquid crystal device using negative dielectric material. Su Seok Choi; Castles, Flynn; Morris, Stephen M.; Coles, Harry J. // Applied Physics Letters;11/9/2009, Vol. 95 Issue 19, p193502 

    A liquid crystal device is demonstrated using a short-pitch (260 nm) chiral nematic with negative dielectric anisotropy. Due to dielectric coupling, an in-plane electric field switches the liquid crystal between the standing-helix (field-off, “dark” state) and lying-helix (field-on,...

  • Anisotropy of optical absorption and fluorescence in Al2O3:C,Mg crystals. Sanyal, Subrata; Akselrod, Mark S. // Journal of Applied Physics;8/1/2005, Vol. 98 Issue 3, p033518 

    Spectroscopic properties of recently discovered fluorescent sapphire single crystals (Al2O3:C,Mg), developed for volumetric optical data storage, are investigated. Polarized optical absorption, excitation-emission spectra, and quantum yield of fluorescence of the crystal in two different...

  • Improved characteristics for Au/n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation. Liu, Z. Y.; Saulys, D. A.; Kuech, T. F. // Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4391 

    The influence of nonaqueous sulfide passivation (using Na2S in the inert solvent benzene) on Au/n-GaSb Schottky junction behavior was studied. The junction parameters, Schottky barrier height and ideality factor, were derived and compared with those of as-received GaSb surfaces as well as...

  • High quality AlN for deep UV photodetectors. Nikishin, S.; Borisov, B.; Pandikunta, M.; Dahal, R.; Lin, J. Y.; Jiang, H. X.; Harris, H.; Holtz, M. // Applied Physics Letters;8/3/2009, Vol. 95 Issue 5, p054101 

    We have prepared large-area, 0.50×0.55 mm2, metal-semiconductor-metal photodetectors based on AlN layers with different density of inversion domains (IDs). AlN layers were grown on (0001) sapphire substrates using gas source molecular beam epitaxy. The introduction of AlN/GaN short period...

  • Effect of Surface Morphology on Electrical Properties of Electrochemically-Etched Porous Silicon Photodetectors. Naderi, N.; Hashim, M. R. // International Journal of Electrochemical Science;Nov2012, Vol. 7 Issue 11, p11512 

    In this communication, porous silicon samples were prepared by pulsed photo-electrochemical etching using HF based solution. The porosity of silicon substrate was changed by applying electroless chemical etching process prior to photo-electrochemical anodization. A novel parameter of delay time...

  • MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates. Qinghong Zheng; Feng Huang; Kai Ding; Jin Huang; Dagui Chen; Zhibing Zhan; Zhang Lin // Applied Physics Letters;5/30/2011, Vol. 98 Issue 22, p221112 

    Using lattice matched ZnO substrates, wurtzite single crystalline Mg0.49Zn0.51O films were obtained by reactive magnetron cosputtering method, and the heterostructures of MgZnO/ZnO were fabricated into metal-semiconductor-metal solar-blind photodetectors (SBPDs). Calculated and experimental...

  • Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study. Haijian Zhong; Ke Xu; Zhenghui Liu; Gengzhao Xu; Lin Shi; Yingmin Fan; Jianfeng Wang; Guoqiang Ren; Hui Yang // Journal of Applied Physics;2014, Vol. 115 Issue 1, p1 

    Graphene has been proposed as a material for semiconductor electronic and optoelectronic devices. Understanding the charge transport mechanisms of graphene/semiconductor Schottky barriers will be crucial for future applications. Here, we report a theoretical model to describe the transport...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics